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| Description
| - The aim of this project is to clarify relation among electronic noise, charge carrier relaxation time, and localized state energy levels in CdTe nuclear radiation sensors, gate insulating layers of MOSFETs and tantalum and niobium capacitors. Long relaxation time constant is observed in above mentioned amorphous and crystalline materials which can not be satisfactorily explained on the basis of Shockley-Read model. In our opinion, the existence of shallow and deep localized states is responsible for these long relaxation constants due to which the carrier exchange is realized among three reservoirs at least. The kinetics of charge carriers in thermodynamic non-equilibrium state will be described on the basis of the Kolmogorow differential equation. The absolute probabilities of reservoir occupation and carrier relaxation constants will be determined. In a strong electric field the transport of ions in amorphous structures is possible. To make this effect clear it will be investigated even in crystalline CdTe samples. The transition from amorphous to crystalline structure is possible in amorphous Ta2O5 and Nb2O5 layers in a strong electric field and under elevated temperatures. This effect will be analyzed in details because it causes capacitor parameter degradation and influences considerably the reliability of these electronic components. (en)
- Objasnit vztah mezi elektronickým šumem, dobou relaxace nosičů náboje a energetickými hladinami lokalizovaných stavů v izolačních vrstvách pro hradla MOSFETů, v izolačních vrstvách tantalových a niob-oxidových kondensátorů a dále CdTe senzorů pro detekci nukleárního záření.
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| Title
| - Stochastic Phenomena in MIS and MIM Semiconductor Structures (en)
- Stochastické jevy v polovodičových strukturách MIS a MIM
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| skos:notation
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| http://linked.open...avai/cep/aktivita
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| http://linked.open...kovaStatniPodpora
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| http://linked.open...ep/celkoveNaklady
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| http://linked.open...datumDodatniDoRIV
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| http://linked.open...i/cep/druhSouteze
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| http://linked.open...ep/duvernostUdaju
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| http://linked.open.../cep/fazeProjektu
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| http://linked.open...ai/cep/hlavniObor
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| http://linked.open...hodnoceniProjektu
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| http://linked.open...vai/cep/kategorie
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| http://linked.open.../cep/klicovaSlova
| - šum, fluktuační procesy, energetické hladiny pastí, MOSFET, kondenzátor (en)
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| http://linked.open...ep/partnetrHlavni
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| http://linked.open...inujicichPrijemcu
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| http://linked.open...cep/pocetPrijemcu
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| http://linked.open...ocetSpoluPrijemcu
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| http://linked.open.../pocetVysledkuRIV
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| http://linked.open...enychVysledkuVRIV
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| http://linked.open...lneniVMinulemRoce
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| http://linked.open.../prideleniPodpory
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| http://linked.open...iciPoslednihoRoku
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| http://linked.open...atUdajeProjZameru
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| http://linked.open.../vavai/cep/soutez
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| http://linked.open...usZobrazovaneFaze
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| http://linked.open...ai/cep/typPojektu
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| http://linked.open...ep/ukonceniReseni
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| http://linked.open.../cep/vedlejsiObor
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| http://linked.open...ep/zahajeniReseni
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| http://linked.open...jektu+dodavatelem
| - Řešení projektu proběhlo výtečně, jak z hlediska odborného tak i z hlediska čerpání finančních prostředků. (cs)
- The project was excellent, both in terms of expertise and in terms of disbursement of funds. (en)
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| http://linked.open...tniCyklusProjektu
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| http://linked.open.../cep/klicoveSlovo
| - šum
- MOSFET
- energetické hladiny pastí
- fluktuační procesy
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| is http://linked.open...vavai/riv/projekt
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| is http://linked.open...vavai/cep/projekt
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