About: Model for rts noise in submicron mosfets

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The paper presents a model for RTS noise in submicron MOSFETs which can explain some of complex switching phenomena being measured in nanoscale devices. A modified two-step approach is proposed. The charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states and is represented by a secondary process Y(t). From the dependence of the capture time constant ?c on the drain current we can calculate x-coordinate of the trap position. The paper presents a model for RTS noise in submicron MOSFETs which can explain some of complex switching phenomena being measured in nanoscale devices. A modified two-step approach is proposed. The charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states and is represented by a secondary process Y(t). From the dependence of the capture time constant ?c on the drain current we can calculate x-coordinate of the trap position. (en) The paper presents a model for RTS noise in submicron MOSFETs which can explain some of complex switching phenomena being measured in nanoscale devices. A modified two-step approach is proposed. The charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states. The measurable quantity is the current modulation, which has discrete states and is represented by a secondary process Y(t). From the dependence of the capture time constant ?c on the drain current we can calculate x-coordinate of the trap position. (cs)
Title	Model for rts noise in submicron mosfets Model for rts noise in submicron mosfets (en) Model for rts noise in submicron mosfets (cs)
skos:prefLabel	Model for rts noise in submicron mosfets Model for rts noise in submicron mosfets (en) Model for rts noise in submicron mosfets (cs)
skos:notation	RIV/00216305:26220/10:PU90266!RIV11-GA0-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/08/0260), P(GA102/09/1920), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Pavelka, Jan Sedláková, Vlasta Šikula, Josef Navarová, Hana Kopecký, Martin Chvátal, Miloš
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	271780
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/10:PU90266
http://linked.open...riv/jazykVysledku	cze - čeština
http://linked.open.../riv/klicovaSlova	GRT model , MOSFET , RTS noise , capture time constant , emission time constant (en)
http://linked.open.../riv/klicoveSlovo	GRT model MOSFET RTS noise capture time constant emission time constant
http://linked.open...ontrolniKodProRIV	[55F0F0AE4DD7]
http://linked.open...v/mistoKonaniAkce	Gdańsk
http://linked.open...i/riv/mistoVydani	Neuveden
http://linked.open...i/riv/nazevZdroje	Model for RTS noise in submicron MOSFETS
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	6 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Stochastic Phenomena in MIS and MIM Semiconductor Structures Low-frequency noise in submicron MOSFET and HEMT structures
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Kopecký, Martin Pavelka, Jan Sedláková, Vlasta Šikula, Josef Navarová, Hana Chvátal, Miloš
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2010-06-28 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	IEEE Explore Digital Library
https://schema.org/isbn	978-1-4244-8182-8
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	Model for rts noise in submicron mosfets

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