About: NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The paper presents the experimental analysis of low frequency noise and charge carrier transport mechanisms in Nb2O5 thin films. The ohmic conduction is dominant for the low electric field. Poole-Frenkel and Schottky mechanism become dominant for electric fields up to 125MV/m. Tunneling current becomes dominant for electric field higher than 125-175 MV/m. This value depend on the temperature. It was proved experimentally at the room temperature that GR noise is dominant for the low electric field (Poole-Frenkel current and Schottky current), while for the high electric field, where the tunneling current is dominant, the low frequency noise is 1/f type. We have arranged the measuring set-up which allows the CV and IV characteristics and low frequency noise measurements in the temperature range 10 to 400 K. The voltage noise spectral density is 1/f type as we expect for high electric field on the sample. The leakage current is exhibiting the tunneling current component only in the temperature range bell The paper presents the experimental analysis of low frequency noise and charge carrier transport mechanisms in Nb2O5 thin films. The ohmic conduction is dominant for the low electric field. Poole-Frenkel and Schottky mechanism become dominant for electric fields up to 125MV/m. Tunneling current becomes dominant for electric field higher than 125-175 MV/m. This value depend on the temperature. It was proved experimentally at the room temperature that GR noise is dominant for the low electric field (Poole-Frenkel current and Schottky current), while for the high electric field, where the tunneling current is dominant, the low frequency noise is 1/f type. We have arranged the measuring set-up which allows the CV and IV characteristics and low frequency noise measurements in the temperature range 10 to 400 K. The voltage noise spectral density is 1/f type as we expect for high electric field on the sample. The leakage current is exhibiting the tunneling current component only in the temperature range bell (en)
Title	NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE (en)
skos:prefLabel	NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE (en)
skos:notation	RIV/00216305:26220/11:PU93447!RIV12-MSM-26220___
http://linked.open...avai/predkladatel	Fakulta elektrotechniky a komunikačních technologií
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Trčka, Tomáš Kopecký, Martin Chvátal, Miloš
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	216129
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/11:PU93447
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Noise, Electron Transport, Nb2O5 (en)
http://linked.open.../riv/klicoveSlovo	Noise Electron Transport Nb2O5
http://linked.open...ontrolniKodProRIV	[1485AECF1EE6]
http://linked.open...v/mistoKonaniAkce	Brno
http://linked.open...i/riv/mistoVydani	Nám. Republiky 614 00 Brno
http://linked.open...i/riv/nazevZdroje	Proc. IMAPS CS Int. Conf. Electronic Devices and Systems EDS 2011
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	85 (xsd:int)
http://linked.open...vavai/riv/projekt	Stochastic Phenomena in MIS and MIM Semiconductor Structures Diagnostics of material defects using the latest defectoscopic methods
http://linked.open...UplatneniVysledku	2011
http://linked.open...iv/tvurceVysledku	Kopecký, Martin Sedláková, Vlasta Trčka, Tomáš Chvátal, Miloš
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2011-06-22 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	279 (xsd:int)
http://purl.org/ne...btex#hasPublisher	NOVPRESS s.r.o.
https://schema.org/isbn	978-80-214-4303-7
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE

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