About: ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Tantalum pent oxide thin films are used as dielectric layers for capacitors, gate insulating layers for MOSFETS, RF MEMS switches, etc. Charge carriers transport mechanism and charge storage in insulating layer are important parameters for the application in these devices. Ta205 films show good electrical and dielectric properties for considered applications and low leakage current density value 4x10-8A/cm2 for the electric field 2 MV/cm. Dominant mechanism of charge carriers' transport is ohmic conduction for the low electric field, while Pool-Frenkel mechanism become dominant for electric field in the range 1 to 2.5 MV/cm. Tunneling current component is comparable with Pool-Frenkel current component or become dominant for electric field higher than 2 MV/cm at temperature lower then 200 K. Tantalum pent oxide thin films are used as dielectric layers for capacitors, gate insulating layers for MOSFETS, RF MEMS switches, etc. Charge carriers transport mechanism and charge storage in insulating layer are important parameters for the application in these devices. Ta205 films show good electrical and dielectric properties for considered applications and low leakage current density value 4x10-8A/cm2 for the electric field 2 MV/cm. Dominant mechanism of charge carriers' transport is ohmic conduction for the low electric field, while Pool-Frenkel mechanism become dominant for electric field in the range 1 to 2.5 MV/cm. Tunneling current component is comparable with Pool-Frenkel current component or become dominant for electric field higher than 2 MV/cm at temperature lower then 200 K. (en)
Title	ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS (en)
skos:prefLabel	ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS (en)
skos:notation	RIV/00216305:26220/10:PU86945!RIV11-GA0-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/09/1920), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Kopecký, Martin
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	256760
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/10:PU86945
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Tantalum Capacitor, Thin Film, Leakage current, Ta205 (en)
http://linked.open.../riv/klicoveSlovo	Leakage current Ta205 Tantalum Capacitor Thin Film
http://linked.open...ontrolniKodProRIV	[DA6980FBF266]
http://linked.open...v/mistoKonaniAkce	FEKT VUT v Brně
http://linked.open...i/riv/mistoVydani	nam. Republiky 15 614 00 Brno
http://linked.open...i/riv/nazevZdroje	PROCEEEDINGS OF THE 16TH CONFERENCE - STUDENT EEICT 2010
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	1 (xsd:int)
http://linked.open...vavai/riv/projekt	Stochastic Phenomena in MIS and MIM Semiconductor Structures
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Kopecký, Martin
http://linked.open...vavai/riv/typAkce	CST - Celostátní
http://linked.open.../riv/zahajeniAkce	2010-04-29 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	NOVPRESS s.r.o.
https://schema.org/isbn	978-80-214-4079-1
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	ELECTRON TRANSPORT IN TA NANOLAYERS: APPLICATION TO TANTALUM CAPACITORS

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