About: Leakage Current and Quantum Effects in Tantalum Capacitors

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The analysis of charge carrier transport in Ta capacitors in the temperature range from 10 to 400 K was performed. The main goal of this work was to determine the potential barriers on Ta-Ta2O5 and Ta2O5-MnO2 (or conducting polymer) interfaces in the device structures Ta- Ta2O5-MnO2 (or conducting polymer) and to find possible influence on the device quality and reliability. Tantalum capacitor is a MIS structure, where insulating Ta2O5 layer is formed on metallic Ta anode and the MnO2 or conducting polymer form cathodes. Decreasing the thickness of the insulating Ta2O5 layer below 100 nm, the classical physical models are not able to give satisfactory descriptions of charge transport mechanism, and voltage and temperature dependences of electrical current. Some quantum effects, as electron tunneling and quantum transitions of electrons from trapping centers levels to conduction band must be taken into account. The traps (oxygen vacancies, their concentration is of the order of 1018 cm-3), rise during The analysis of charge carrier transport in Ta capacitors in the temperature range from 10 to 400 K was performed. The main goal of this work was to determine the potential barriers on Ta-Ta2O5 and Ta2O5-MnO2 (or conducting polymer) interfaces in the device structures Ta- Ta2O5-MnO2 (or conducting polymer) and to find possible influence on the device quality and reliability. Tantalum capacitor is a MIS structure, where insulating Ta2O5 layer is formed on metallic Ta anode and the MnO2 or conducting polymer form cathodes. Decreasing the thickness of the insulating Ta2O5 layer below 100 nm, the classical physical models are not able to give satisfactory descriptions of charge transport mechanism, and voltage and temperature dependences of electrical current. Some quantum effects, as electron tunneling and quantum transitions of electrons from trapping centers levels to conduction band must be taken into account. The traps (oxygen vacancies, their concentration is of the order of 1018 cm-3), rise during (en)
Title	Leakage Current and Quantum Effects in Tantalum Capacitors Leakage Current and Quantum Effects in Tantalum Capacitors (en)
skos:prefLabel	Leakage Current and Quantum Effects in Tantalum Capacitors Leakage Current and Quantum Effects in Tantalum Capacitors (en)
skos:notation	RIV/00216305:26220/10:PU89316!RIV11-GA0-26220___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/09/1920), P(KAN401770651), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Nešpůrek, Stanislav Sedláková, Vlasta Šikula, Josef Navarová, Hana Kopecký, Martin Chvátal, Miloš Zedníček, Tomáš Biler, Martin
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	268069
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/10:PU89316
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Leakage Current, Quantum Effects, Tantalum, Capacitors, Ta (en)
http://linked.open.../riv/klicoveSlovo	Capacitors Leakage Current Tantalum Ta Quantum Effects
http://linked.open...ontrolniKodProRIV	[1C6D92E991B9]
http://linked.open...v/mistoKonaniAkce	Munich
http://linked.open...i/riv/mistoVydani	Munich, Germany
http://linked.open...i/riv/nazevZdroje	CARTS Europe 2010
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	8 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...vavai/riv/projekt	Stochastic Phenomena in MIS and MIM Semiconductor Structures Molecular nanosystems and nanodevices: electric transport properties
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Kopecký, Martin Nešpůrek, Stanislav Sedláková, Vlasta Šikula, Josef Navarová, Hana Zedníček, Tomáš Chvátal, Miloš Biler, Martin
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2010-11-10 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	10 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Electronic Components Association
https://schema.org/isbn	0-7908-0151-5
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	Leakage Current and Quantum Effects in Tantalum Capacitors

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