About: Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors

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Description	Leakage current of NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage and tunneling current component is observable for electric field of the order 1MV/cm. It was found that all parameters of NbO capacitors are very stable at room temperature. High temperature and high voltage applications are considered to be limited by ions diffusion and field crystallization mechanisms. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in NbO capacitors was performed to analyze leakage current kinetics vs. temperature and electric field. VA characteristics in normal and reverse mode in temperature range from 25 to 125 C have been used to analyze the changes of leakage current (DCL) and the MIS model parameters during ageing at elevated temperature. From experimental results it was found that amorphous oxide film of Nb205 is characterized by the presenc Leakage current of NbO capacitors at the room temperature is driven by the Ohmic and Poole-Frenkel mechanism at the rated voltage and tunneling current component is observable for electric field of the order 1MV/cm. It was found that all parameters of NbO capacitors are very stable at room temperature. High temperature and high voltage applications are considered to be limited by ions diffusion and field crystallization mechanisms. Further investigation in this field can lead to the enhancement of reliability and performance of these capacitors. An analysis of charge carrier transport in NbO capacitors was performed to analyze leakage current kinetics vs. temperature and electric field. VA characteristics in normal and reverse mode in temperature range from 25 to 125 C have been used to analyze the changes of leakage current (DCL) and the MIS model parameters during ageing at elevated temperature. From experimental results it was found that amorphous oxide film of Nb205 is characterized by the presenc (en)
Title	Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors (en)
skos:prefLabel	Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors (en)
skos:notation	RIV/00216305:26220/11:PU95271!RIV12-MSM-26220___
http://linked.open...avai/predkladatel	Fakulta elektrotechniky a komunikačních technologií
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/09/1920), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Sedláková, Vlasta Šikula, Josef Navarová, Hana Kopecký, Martin
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	205787
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/11:PU95271
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	ion diffusion, field crystalization, NbO (en)
http://linked.open.../riv/klicoveSlovo	NbO field crystalization ion diffusion
http://linked.open...ontrolniKodProRIV	[151A7FD7EAF1]
http://linked.open...v/mistoKonaniAkce	Nice
http://linked.open...i/riv/mistoVydani	Nice, France
http://linked.open...i/riv/nazevZdroje	CARTS EUROPE 2011 PROCEEDING
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Stochastic Phenomena in MIS and MIM Semiconductor Structures
http://linked.open...UplatneniVysledku	2011
http://linked.open...iv/tvurceVysledku	Kopecký, Martin Sedláková, Vlasta Šikula, Josef Navarová, Hana Zedníček, Tomáš
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2011-10-10 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	9 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Electronic Components Industry Association ECIA
https://schema.org/isbn	0-7908-0155-8
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors Ion Diffusion and Field Crystallization in Niobium Oxide Capacitors

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