About: High-rate reactive deposition of transparent SiO2 films containing low amount of Zr from molten magnetron target     Goto   Sponge   NotDistinct   Permalink

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  • The paper reports on a reactive deposition of transparent SiO2 films with a low amount (<= 3 at.%) of Zr prepared from the molten target using the AC pulsed dual magnetron It is shown that the deposition rate a(D) of the transparent oxide film strongly increases at the critical target power density (W-t)(cr) when the solid target starts to melt and the magnetron operates with a molten target. In this case the evaporation of target material plays a dominant role in the reactive deposition of thin films This process is called the ionized magnetron evaporation Oxide films reactively deposited from the molten target are well transparent and highly elastic The maximum deposition rate of the transparent oxide film achieved in our experiments is 814 nm/min.
  • The paper reports on a reactive deposition of transparent SiO2 films with a low amount (<= 3 at.%) of Zr prepared from the molten target using the AC pulsed dual magnetron It is shown that the deposition rate a(D) of the transparent oxide film strongly increases at the critical target power density (W-t)(cr) when the solid target starts to melt and the magnetron operates with a molten target. In this case the evaporation of target material plays a dominant role in the reactive deposition of thin films This process is called the ionized magnetron evaporation Oxide films reactively deposited from the molten target are well transparent and highly elastic The maximum deposition rate of the transparent oxide film achieved in our experiments is 814 nm/min. (en)
Title
  • High-rate reactive deposition of transparent SiO2 films containing low amount of Zr from molten magnetron target
  • High-rate reactive deposition of transparent SiO2 films containing low amount of Zr from molten magnetron target (en)
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  • High-rate reactive deposition of transparent SiO2 films containing low amount of Zr from molten magnetron target
  • High-rate reactive deposition of transparent SiO2 films containing low amount of Zr from molten magnetron target (en)
skos:notation
  • RIV/68378271:_____/10:00437497!RIV15-AV0-68378271
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(OC10045), Z(AV0Z10100520), Z(MSM4977751302)
http://linked.open...iv/cisloPeriodika
  • 2
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 261596
http://linked.open...ai/riv/idVysledku
  • RIV/68378271:_____/10:00437497
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • sputtering; evaporation; reactive deposition; target power density (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV
  • [C8970F9AC35C]
http://linked.open...i/riv/nazevZdroje
  • Thin Solid Films
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
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http://linked.open...v/svazekPeriodika
  • 519
http://linked.open...iv/tvurceVysledku
  • Musil, Jindřich
  • Baroch, P.
  • Satava, V.
http://linked.open...ain/vavai/riv/wos
  • 000284499500039
http://linked.open...n/vavai/riv/zamer
issn
  • 0040-6090
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.tsf.2010.09.009
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