About: BGSOI WAFER FOR ULTRA FS IGBT

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	BGSOI (BOND and GRIND back SILICON-ON-INSULATOR) wafer for Ultra FS IGBT technology. Polished BGSOI wafer with diameter of 150 mm consists from thick device layer (> 100 um), thin BOX (BURIED OXIDE) layer (<200 nm) and silicon substrate. BGSOI (BOND and GRIND back SILICON-ON-INSULATOR) wafer for Ultra FS IGBT technology. Polished BGSOI wafer with diameter of 150 mm consists from thick device layer (> 100 um), thin BOX (BURIED OXIDE) layer (<200 nm) and silicon substrate. (en)
Title	BGSOI WAFER FOR ULTRA FS IGBT BGSOI WAFER FOR ULTRA FS IGBT (en)
skos:prefLabel	BGSOI WAFER FOR ULTRA FS IGBT BGSOI WAFER FOR ULTRA FS IGBT (en)
skos:notation	RIV/26821532:_____/13:#0000069!RIV14-TA0-26821532
http://linked.open...avai/predkladatel	ON SEMICONDUCTOR CZECH REPUBLIC, s.r.o., právní nástupce
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(TA01010078)
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Lorenc, Michal Pospíšil, Miloš Válek, Lukáš
http://linked.open.../riv/druhVysledku	G/B - Funkční vzorek
http://linked.open...iv/duvernostUdaju	C - Předmět podléhá obchodnímu tajemství (§17 až 20 Obchodního zákoníku), ale některé údaje jsou upraveny tak, aby byly zveřejnitelné
http://linked.open...onomickeParametry	Jednotková cena 80 USD/deska. Pčekávaný objem výroby min. 5000 desek/rok.
http://linked.open...titaPredkladatele	ON SEMICONDUCTOR CZECH REPUBLIC, s.r.o.
http://linked.open...dnocenehoVysledku	63287
http://linked.open...ai/riv/idVysledku	RIV/26821532:_____/13:#0000069
http://linked.open...terniIdentifikace	W760S00
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open...vai/riv/kategorie	A - Do 5 mil. Kč
http://linked.open.../riv/klicovaSlova	SOI, BGSOI, Silicon-On-Insulator, BOX, buried oxide, semiconductor, silicon, bonding, wafer (en)
http://linked.open.../riv/klicoveSlovo	BOX buried oxide silicon bonding semiconductor BGSOI wafer SOI Silicon-On-Insulator
http://linked.open...ontrolniKodProRIV	[9BD36BD2DF56]
http://linked.open.../licencniPoplatek	A - Poskytovatel licence na výsledek požaduje licenční poplatek
http://linked.open...in/vavai/riv/obor	JJ
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	SOI Structures for Advanced Semiconductor Applications
http://linked.open...UplatneniVysledku	2013
http://linked.open...echnickeParametry	Wafer diameter: 150+/-0.2 mm, wafer thickness: 625 +/-10 um, WARP max. 50 um, BOW max. 40 um, TTV max. 4 um, SOI layer thickness 105 +/- 1 um, BOX 130 - 140 nm. Výsledek bude využit příjemcem - ON SEMICONDUCTOR (IČ26821532) ve výrobní lince CZ2. Licenční smlouva nebyla uzavřena. Odpovědnost: M. Lorenc, +420571754507, michal.lorenc@onsemi.com.
http://linked.open...iv/tvurceVysledku	Lorenc, Michal Pospíšil, Miloš Válek, Lukáš
http://linked.open...avai/riv/vlastnik	ON SEMICONDUCTOR CZECH REPUBLIC, s.r.o.
http://linked.open...itiJinymSubjektem	A - Nabytí licence je nutné vždy

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