About: ON SEMICONDUCTOR CZECH REPUBLIC, s.r.o., právní nástupce

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is http://linked.open...avai/predkladatel of	BGSOI WAFER FOR ULTRA FS IGBT Czochralskiho růst 6%22 křemíkových krystalů orientace (110) Magnetic Czochralski Silicon Crystal Growth (MCZ) of 6%22 (100) and (111) Ingots CZ/MCZ crystal growth of slightly doped 8%22 ingots (100) from 150 kg charge Integrated circuit NCV4275C (5V/450 mA Low-Drop Voltage Regulator) Optimization of the bond and etch-back silicon-on-insulator manufacturing processes Process of Advanced Epitaxial Growth (AEPI) on 150 and 200 mm Silicon substrates. Silicon wafer (150 mm) with chips of 600V NPT IGBT technology Silicon wafer (150 mm) with chips of 1200V NPT IGBT technology Silicon wafer (150 mm) with chips of 600V FS IGBT technology Silicon wafer (150 mm) with chips of technology of 1200V FS IGBT Anisotropic etching of silicon by TMAH I3T/SOI<110> Macroscopic signs of crystal structure Technology ON50A for manufacturing of bipolar integrated circuits with complementary vertical transistors NPN/PNP Technology ON50 for manufacturing of bipolar integrated circuit for automotive industry 200 MM BGSOI WAFER 200 MM BESOI WAFER Direct wafer bonding for SOI Final Product Specification for FRTI3031 <110> 625 µm or 525 µm Polished Wafers Final Product Specification for 200 mm AEPI W814AXX Silicon Epitaxial Wafers DEMO SAMPLE (PROTOTYPE) BESOI/1um WAFER DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078 - W750S01/S00 SOI Wafers / 3 µm Defect engineering during Czochralski crystal growth and silicon wafer manufacturing SOI / Silicon on Insulator on Insulator 600V NPT IGBT Process 1200V FS IGBT Process 1200V NPT IGBT Process 600V FS IGBT Process Polycrystalline silicon layers with enhanced thermal stability Advanced BGSOI Technology Advanced BESOI Technology HFVR/SOI
is http://linked.open...ep/partnetrHlavni of	SOI Structures for Advanced Semiconductor Applications Research and development of advanced complementary bipolar technology for manufacturing of integrated circuits. Research and development of advanced IGBT technologies for high voltage power applications Research and Development of Technologies of Manufacturing of Novel Species of Silicon Wafers Research and development of advanced silicon wafer for sub-micron technologies. Výzkum a vývoj technologie pro výrobu detektorů záření na 150 mm křemíkových substrátech. Development of Novel Technologies for Trench Insulated Gate Bipolar Transistors (TIGBT) Manufacturing Novel Wide Bandgap Semiconductor Materials and Devices
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