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  • RF and DC plasma jet sputtering systems were investigated as sources for deposition of ZnO thin films. Deposited zone films have a strong orientation of hexagonal crystallites with the 'c' axis perpendicular to the substrate surface. Temperature of the substrate did not exceed 150 °C during the deposition. Langmuir probe measurement performed at the substrate revealed two groups of electrons with different temperatures in the DC plasma jet. A single group of electrons was found in the RF plasma jet system. Electron concentration in the RF jet was found to be about neRF ? 5 ? 109 ­1010 cm-3 with temperature TeRF ? 2.5­3.5 eV. In the DC plasma jet, concentration of cold electrons was usually nec ? 109 cm-3 with temperature Tec ? 0.5 eV and concentration of hot electrons was neh ? 108 cm-3 with temperature Teh ? 2­3.5 eV. Photographs also confirmed that the plasma density is higher in the position of the substrate in the RF jet than in the DC jet.
  • RF and DC plasma jet sputtering systems were investigated as sources for deposition of ZnO thin films. Deposited zone films have a strong orientation of hexagonal crystallites with the 'c' axis perpendicular to the substrate surface. Temperature of the substrate did not exceed 150 °C during the deposition. Langmuir probe measurement performed at the substrate revealed two groups of electrons with different temperatures in the DC plasma jet. A single group of electrons was found in the RF plasma jet system. Electron concentration in the RF jet was found to be about neRF ? 5 ? 109 ­1010 cm-3 with temperature TeRF ? 2.5­3.5 eV. In the DC plasma jet, concentration of cold electrons was usually nec ? 109 cm-3 with temperature Tec ? 0.5 eV and concentration of hot electrons was neh ? 108 cm-3 with temperature Teh ? 2­3.5 eV. Photographs also confirmed that the plasma density is higher in the position of the substrate in the RF jet than in the DC jet. (en)
Title
  • Investigation of RF and DC plasma jet system during deposition of highly oriented ZnO thin films
  • Investigation of RF and DC plasma jet system during deposition of highly oriented ZnO thin films (en)
skos:prefLabel
  • Investigation of RF and DC plasma jet system during deposition of highly oriented ZnO thin films
  • Investigation of RF and DC plasma jet system during deposition of highly oriented ZnO thin films (en)
skos:notation
  • RIV/68407700:21340/03:04092460!RIV/2004/MSM/213404/N
http://linked.open.../vavai/riv/strany
  • 627 ; 631
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA202/00/1592), P(GP202/02/P021), P(LN00A015), P(ME 441), Z(AV0Z1010914), Z(MSM 113200002), Z(MSM 210000022)
http://linked.open...iv/cisloPeriodika
  • 1
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 611172
http://linked.open...ai/riv/idVysledku
  • RIV/68407700:21340/03:04092460
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Plasma jet; ZnO thin films; Langmuir probe; Hollow cathode discharge (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [CEF8804BF8B1]
http://linked.open...i/riv/nazevZdroje
  • Surface and Coatings Technology
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 174
http://linked.open...iv/tvurceVysledku
  • Jastrabík, L.
  • Ptáček, Pavel
  • Hubička, Z.
  • Adámek, P.
  • Čada, M.
  • Šícha, M.
  • Šíchová, H.
http://linked.open...n/vavai/riv/zamer
issn
  • 0257-8972
number of pages
http://localhost/t...ganizacniJednotka
  • 21340
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