Attributes | Values |
---|
rdf:type
| |
Description
| - Optické vlastnosti InAs kvantových teček připravených metodou MOVPE překryté InxGa1xAs pnutí redukující vrstvou byly studovány fotomodulovanou reflekční a luminiscenční spektroskopií. S rostoucím obsahem In v InxGa1xAs krycí vrstvě dochází k posuvu emisní vlnové délky od 1,25 do 1,46 mum a zužování emisních linií. Velký posun emise je způsoben změnou pásové struktury a změnou výšky kvantových teček. (cs)
- Optical properties of MOVPE grown InAs quantum dots in GaAs covered by thin InxGa1xAs strain reducing layer were studied by photomodulated reflectance and photoluminescence spectroscopy. The increasing In content in the strain reducing layer shifts the luminescence of quantum dots from 1.25 to 1.46 mum and narrows the photoluminescence linewidth. The strong photoluminescence red shift is caused both by the change of the band structure and the height of quantum dots which.
- Optical properties of MOVPE grown InAs quantum dots in GaAs covered by thin InxGa1xAs strain reducing layer were studied by photomodulated reflectance and photoluminescence spectroscopy. The increasing In content in the strain reducing layer shifts the luminescence of quantum dots from 1.25 to 1.46 mum and narrows the photoluminescence linewidth. The strong photoluminescence red shift is caused both by the change of the band structure and the height of quantum dots which. (en)
|
Title
| - InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
- Struktury s InAs/GaAs kvantovými tečkami pokryté InGaAs pnutí redukující vrstvou charakterizované fotomodulovanou reflektancí (cs)
- InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance (en)
|
skos:prefLabel
| - InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
- Struktury s InAs/GaAs kvantovými tečkami pokryté InGaAs pnutí redukující vrstvou charakterizované fotomodulovanou reflektancí (cs)
- InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance (en)
|
skos:notation
| - RIV/68378271:_____/08:00306889!RIV08-AV0-68378271
|
http://linked.open.../vavai/riv/strany
| |
http://linked.open...avai/riv/aktivita
| |
http://linked.open...avai/riv/aktivity
| - P(GA202/06/0718), P(IAA100100719), P(KJB101630601), Z(AV0Z10100521)
|
http://linked.open...iv/cisloPeriodika
| |
http://linked.open...vai/riv/dodaniDat
| |
http://linked.open...aciTvurceVysledku
| |
http://linked.open.../riv/druhVysledku
| |
http://linked.open...iv/duvernostUdaju
| |
http://linked.open...titaPredkladatele
| |
http://linked.open...dnocenehoVysledku
| |
http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/08:00306889
|
http://linked.open...riv/jazykVysledku
| |
http://linked.open.../riv/klicovaSlova
| - optical properties; MOVPE; indium arsenide; gallium arsenide; quantum dots (en)
|
http://linked.open.../riv/klicoveSlovo
| |
http://linked.open...odStatuVydavatele
| - CH - Švýcarská konfederace
|
http://linked.open...ontrolniKodProRIV
| |
http://linked.open...i/riv/nazevZdroje
| - Materials Science and Engineering B-Advanced Functional Solid-State Materials
|
http://linked.open...in/vavai/riv/obor
| |
http://linked.open...ichTvurcuVysledku
| |
http://linked.open...cetTvurcuVysledku
| |
http://linked.open...vavai/riv/projekt
| |
http://linked.open...UplatneniVysledku
| |
http://linked.open...v/svazekPeriodika
| |
http://linked.open...iv/tvurceVysledku
| - Hulicius, Eduard
- Pangrác, Jiří
- Hazdra, P.
- Hospodková, Alice
- Kuldová, Karla
- Oswald, Jiří
- Atef, M.
|
http://linked.open...n/vavai/riv/zamer
| |
issn
| |
number of pages
| |
is http://linked.open...avai/riv/vysledek
of | |