About: InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Optické vlastnosti InAs kvantových teček připravených metodou MOVPE překryté InxGa1xAs pnutí redukující vrstvou byly studovány fotomodulovanou reflekční a luminiscenční spektroskopií. S rostoucím obsahem In v InxGa1xAs krycí vrstvě dochází k posuvu emisní vlnové délky od 1,25 do 1,46 mum a zužování emisních linií. Velký posun emise je způsoben změnou pásové struktury a změnou výšky kvantových teček. (cs) Optical properties of MOVPE grown InAs quantum dots in GaAs covered by thin InxGa1xAs strain reducing layer were studied by photomodulated reflectance and photoluminescence spectroscopy. The increasing In content in the strain reducing layer shifts the luminescence of quantum dots from 1.25 to 1.46 mum and narrows the photoluminescence linewidth. The strong photoluminescence red shift is caused both by the change of the band structure and the height of quantum dots which. Optical properties of MOVPE grown InAs quantum dots in GaAs covered by thin InxGa1xAs strain reducing layer were studied by photomodulated reflectance and photoluminescence spectroscopy. The increasing In content in the strain reducing layer shifts the luminescence of quantum dots from 1.25 to 1.46 mum and narrows the photoluminescence linewidth. The strong photoluminescence red shift is caused both by the change of the band structure and the height of quantum dots which. (en)
Title	InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance Struktury s InAs/GaAs kvantovými tečkami pokryté InGaAs pnutí redukující vrstvou charakterizované fotomodulovanou reflektancí (cs) InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance (en)
skos:prefLabel	InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance Struktury s InAs/GaAs kvantovými tečkami pokryté InGaAs pnutí redukující vrstvou charakterizované fotomodulovanou reflektancí (cs) InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance (en)
skos:notation	RIV/68378271:_____/08:00306889!RIV08-AV0-68378271
http://linked.open.../vavai/riv/strany	175;178
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA202/06/0718), P(IAA100100719), P(KJB101630601), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	-
http://linked.open...vai/riv/dodaniDat	2008
http://linked.open...aciTvurceVysledku	Pangrác, Jiří Hulicius, Eduard Kuldová, Karla Oswald, Jiří Hospodková, Alice
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	371804
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/08:00306889
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	optical properties; MOVPE; indium arsenide; gallium arsenide; quantum dots (en)
http://linked.open.../riv/klicoveSlovo	MOVPE optical properties gallium arsenide quantum dots indium arsenide
http://linked.open...odStatuVydavatele	CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV	[F6045F88C525]
http://linked.open...i/riv/nazevZdroje	Materials Science and Engineering B-Advanced Functional Solid-State Materials
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	5 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...vavai/riv/projekt	Quantum dot engineering Controlled quantum dot MOVPE growth Morfology of quantum dots and its impact to the electronic structure
http://linked.open...UplatneniVysledku	2008
http://linked.open...v/svazekPeriodika	147
http://linked.open...iv/tvurceVysledku	Hulicius, Eduard Pangrác, Jiří Hazdra, P. Hospodková, Alice Kuldová, Karla Oswald, Jiří Atef, M.
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	0921-5107
number of pages	4 (xsd:int)
is http://linked.open...avai/riv/vysledek of	InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

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