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rdf:type
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Description
| - Prototype (sample) of Bond and Grind Back Silicon-On-Insulator (BGSOI) wafer. BGSOI wafer diameter 150 mm, CZSi substrate sligthly doped by Boron (3-13 ohmcm), thickness 625 or 525 um, BOX (buried oxide layer) 620 nm, defect-free device layer thickness 3 +/- 0.3 um. Crystallographic orientation (100). Bonded interface: BOX/device layer. Back side surface: thermal oxide > 200 nm.
- Prototype (sample) of Bond and Grind Back Silicon-On-Insulator (BGSOI) wafer. BGSOI wafer diameter 150 mm, CZSi substrate sligthly doped by Boron (3-13 ohmcm), thickness 625 or 525 um, BOX (buried oxide layer) 620 nm, defect-free device layer thickness 3 +/- 0.3 um. Crystallographic orientation (100). Bonded interface: BOX/device layer. Back side surface: thermal oxide > 200 nm. (en)
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Title
| - DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078 - W750S01/S00 SOI Wafers / 3 µm
- DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078 - W750S01/S00 SOI Wafers / 3 µm (en)
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skos:prefLabel
| - DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078 - W750S01/S00 SOI Wafers / 3 µm
- DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078 - W750S01/S00 SOI Wafers / 3 µm (en)
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skos:notation
| - RIV/26821532:_____/12:#0000036!RIV13-TA0-26821532
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http://linked.open...avai/predkladatel
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...onomickeParametry
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/26821532:_____/12:#0000036
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http://linked.open...terniIdentifikace
| - V001/TA01010078-W750S01/S00
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http://linked.open...riv/jazykVysledku
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http://linked.open...vai/riv/kategorie
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http://linked.open.../riv/klicovaSlova
| - SOI; Silicon-On-Insulator; BGSOI; Polished wafer (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open.../licencniPoplatek
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...echnickeParametry
| - Diameter 150 mm, substrate CZSi:B 3-13 ohmcm, (100), THK 625 or 525 um, BOX 620 nm, defect-free DL THK 3 +/- 0.3 um.
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http://linked.open...iv/tvurceVysledku
| - Lorenc, Michal
- Pospíšil, Miloš
- Válek, Lukáš
- Šik, Jan
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http://linked.open...avai/riv/vlastnik
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http://linked.open...itiJinymSubjektem
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