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rdf:type
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Description
| - Prototype (sample) of Bond and Etch Back Silicon-On-Insulator (BESOI) wafer. BESOI wafer diameter 150 mm, CZSi substrate heavily doped by Phosphorus (<0.002 ohmcm) thickness 625 um, BOX (buried oxide layer) 620 nm, epitaxial device layer thickness 1.0 um, device layer thickness variability +/- 0.2 um. Crystallographic orientation (100). Bonded interface: BOX/device layer. Back side surface: thermal oxide > 200 nm.
- Prototype (sample) of Bond and Etch Back Silicon-On-Insulator (BESOI) wafer. BESOI wafer diameter 150 mm, CZSi substrate heavily doped by Phosphorus (<0.002 ohmcm) thickness 625 um, BOX (buried oxide layer) 620 nm, epitaxial device layer thickness 1.0 um, device layer thickness variability +/- 0.2 um. Crystallographic orientation (100). Bonded interface: BOX/device layer. Back side surface: thermal oxide > 200 nm. (en)
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Title
| - DEMO SAMPLE (PROTOTYPE) BESOI/1um WAFER
- DEMO SAMPLE (PROTOTYPE) BESOI/1um WAFER (en)
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skos:prefLabel
| - DEMO SAMPLE (PROTOTYPE) BESOI/1um WAFER
- DEMO SAMPLE (PROTOTYPE) BESOI/1um WAFER (en)
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skos:notation
| - RIV/26821532:_____/12:#0000035!RIV13-TA0-26821532
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http://linked.open...avai/predkladatel
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...onomickeParametry
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/26821532:_____/12:#0000035
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http://linked.open...terniIdentifikace
| - V001/TA01010078-W660S01 SOI /1µm
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http://linked.open...riv/jazykVysledku
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http://linked.open...vai/riv/kategorie
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http://linked.open.../riv/klicovaSlova
| - SOI; Silicon-On-Insulator; BESOI; polished wafer (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open.../licencniPoplatek
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...echnickeParametry
| - Diameter 150 mm, CZSi:P <0.002 ohmcm (100), THK 625 um, BOX 620 nm, EPI DL THK 1.0 um +/- 0.2 um. .
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http://linked.open...iv/tvurceVysledku
| - Kostelník, Petr
- Lorenc, Michal
- Pospíšil, Miloš
- Válek, Lukáš
- Šik, Jan
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http://linked.open...avai/riv/vlastnik
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http://linked.open...itiJinymSubjektem
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