Attributes | Values |
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rdf:type
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Description
| - Prototype (sample) of advanced Silicon-On-Insulator (SOI) structure based on <110> substrate. SOI wafer diameter 150 mm, thickness 525 or 625 um, crystallographic orientation <110>, BOX 620 nm, device layer thickness 3 um, device layer thickness variability +/- 0.5 um.
- Prototype (sample) of advanced Silicon-On-Insulator (SOI) structure based on <110> substrate. SOI wafer diameter 150 mm, thickness 525 or 625 um, crystallographic orientation <110>, BOX 620 nm, device layer thickness 3 um, device layer thickness variability +/- 0.5 um. (en)
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Title
| - I3T/SOI<110>
- I3T/SOI<110> (en)
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skos:prefLabel
| - I3T/SOI<110>
- I3T/SOI<110> (en)
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skos:notation
| - RIV/26821532:_____/11:#0000030!RIV12-TA0-26821532
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http://linked.open...avai/predkladatel
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...onomickeParametry
| - Jednotková cena SOI desky pod 60 USD s potenciálem zvýšení výroby, exportu i zisku (plánované uplatnění výsledku od roku 2012-13).
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/26821532:_____/11:#0000030
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http://linked.open...terniIdentifikace
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http://linked.open...riv/jazykVysledku
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http://linked.open...vai/riv/kategorie
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http://linked.open.../riv/klicovaSlova
| - SOI; Silicon; Silicon-On-Insulator; Wafer; Bonding (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open.../licencniPoplatek
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http://linked.open...okalizaceVysledku
| - ON SEMICONDUCTOR, Rožnov pod Radhoštěm - ONCR/RDCE/BUDOVA V12
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...echnickeParametry
| - SOI: Substrát: průměr 150mm <110> Si:B 525 or 625 um, BOX 620 +/- 10 nm, aktivní vrstva Si:B (100) 3 um +/- 0.5um.
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http://linked.open...iv/tvurceVysledku
| - Lorenc, Michal
- Pospíšil, Miloš
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http://linked.open...avai/riv/vlastnik
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http://linked.open...itiJinymSubjektem
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