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Description
  • A hybrid high-power impulse magnetron sputtering (HiPIMS) + mid-frequency (MF) magnetron sputtering system was used for the deposition of crystalline TiO2 thin films at a low substrate temperature. Ion velocity distribution functions were measured in a pulsed magnetron discharge at substrate positions depending on the type of plasma excitation and on theworking gasmixtures. Several different pulsed discharge configurations were used: (i) HiPIMS, (ii) pulsed bipolar MF with frequency 350 kHz and (iii) both HiPIMS + MF connected in parallel to themagnetron cathode. Ti targets were sputtered in three different types of atmospheres: (i) inert pure Ar, (ii) a reactive mixture of Ar + O2 and (iii) a reactive mixture of Ar + O2 + N2 with a constant gas pressure p = 1 Pa. All IVDFs were measured using a time-resolved retarding field energy analyzer (RFEA) located in the substrate position. The thin film properties are discussed with respect to the measured plasma parameters.
  • A hybrid high-power impulse magnetron sputtering (HiPIMS) + mid-frequency (MF) magnetron sputtering system was used for the deposition of crystalline TiO2 thin films at a low substrate temperature. Ion velocity distribution functions were measured in a pulsed magnetron discharge at substrate positions depending on the type of plasma excitation and on theworking gasmixtures. Several different pulsed discharge configurations were used: (i) HiPIMS, (ii) pulsed bipolar MF with frequency 350 kHz and (iii) both HiPIMS + MF connected in parallel to themagnetron cathode. Ti targets were sputtered in three different types of atmospheres: (i) inert pure Ar, (ii) a reactive mixture of Ar + O2 and (iii) a reactive mixture of Ar + O2 + N2 with a constant gas pressure p = 1 Pa. All IVDFs were measured using a time-resolved retarding field energy analyzer (RFEA) located in the substrate position. The thin film properties are discussed with respect to the measured plasma parameters. (en)
Title
  • Investigation of reactive HiPIMS + MF sputtering of TiO2 crystalline thin films
  • Investigation of reactive HiPIMS + MF sputtering of TiO2 crystalline thin films (en)
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  • Investigation of reactive HiPIMS + MF sputtering of TiO2 crystalline thin films
  • Investigation of reactive HiPIMS + MF sputtering of TiO2 crystalline thin films (en)
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  • RIV/68378271:_____/13:00422122!RIV15-GA0-68378271
http://linked.open...avai/riv/aktivita
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  • I, P(GAP108/12/1941), P(GAP108/12/2104), P(LD12002), P(LH12043), P(LH12045)
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  • OCT
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  • 81112
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  • RIV/68378271:_____/13:00422122
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  • HiPIMS; mid-frequency; ion velocity distribution function; TiO2; rutile (en)
http://linked.open.../riv/klicoveSlovo
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  • CH - Švýcarská konfederace
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  • [B8A96AD0D0F1]
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  • Surface and Coatings Technology
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  • 232
http://linked.open...iv/tvurceVysledku
  • Adámek, Petr
  • Kment, Štěpán
  • Olejníček, Jiří
  • Gregora, Ivan
  • Hubička, Zdeněk
  • Kšírová, Petra
  • Čada, Martin
http://linked.open...ain/vavai/riv/wos
  • 000327691300050
issn
  • 0257-8972
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.surfcoat.2013.05.038
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