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| Description
| - Pomocí experimentů optické excitace - terahertzového sondování byla studována série tenkých vrstev mikrokrystalického křemíku s strukturou měnící se od amorfní po zcela mikrokrystalickou. Vzorky byly opticky excitovány na vlnových délkách 800 a 400 nm a jejich odezva byla měřena až do nízkých teplot (20 K). Vlastnosti nanoskopického transportu náboje se výrazně mění na sub-pikosekundové časové škále. Počáteční fotovodivost vzorků je určena zejména horkými volnými nositeli náboje s pohyblivostí 70 cm2/Vs. Tito nositelé jsou rychle (0.6 ps) zachyceny do slabě lokalizovaných hoppingových stavů. Hoppingový transport pak určuje tvar terahertzových spekter na pikosekundové a sub-nanosekundové škále. Saturovaná vysokofrekvenční hodnota hoppingové pohyblivosti je určena mikroskopickou neuspořádaností amorfního vzorku a elektron-fononovou interakcí v mikrokrystalických vzorcích. (cs)
- We present the results of optical pump - terahertz probe experiments applied to a set of thin film microcrystalline silicon samples, with structures varying from amorphous to fully microcrystalline. The samples were excited at wavelengths 800 and 400 nm and studied at temperatures down to 20 K. The character of nanoscopic electrical transport properties markedly change on a sub-picosecond time scale. The initial transient photoconductivity of the samples is dominated by hot free carriers with a mobility of 70 cm2/Vs. These carriers are rapidly (within 0.6 ps) trapped into weakly localized hopping states. The hopping process dominates the THz spectra on the picosecond and sub-ns time scales. The saturated high-frequency value of the hopping mobility is limited by the sample disorder in the amorphous sample and by electron-phonon interaction for microcrystalline samples.
- We present the results of optical pump - terahertz probe experiments applied to a set of thin film microcrystalline silicon samples, with structures varying from amorphous to fully microcrystalline. The samples were excited at wavelengths 800 and 400 nm and studied at temperatures down to 20 K. The character of nanoscopic electrical transport properties markedly change on a sub-picosecond time scale. The initial transient photoconductivity of the samples is dominated by hot free carriers with a mobility of 70 cm2/Vs. These carriers are rapidly (within 0.6 ps) trapped into weakly localized hopping states. The hopping process dominates the THz spectra on the picosecond and sub-ns time scales. The saturated high-frequency value of the hopping mobility is limited by the sample disorder in the amorphous sample and by electron-phonon interaction for microcrystalline samples. (en)
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| Title
| - Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy
- Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy (en)
- Ultrarychlá dynamika nositelů náboje v mikrokrystalickém křemíku studovaná pomocí časově rozlišené terahertzové spektroskopie (cs)
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| skos:prefLabel
| - Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy
- Ultrafast carrier dynamics in microcrystalline silicon probed by time-resolved terahertz spectroscopy (en)
- Ultrarychlá dynamika nositelů náboje v mikrokrystalickém křemíku studovaná pomocí časově rozlišené terahertzové spektroskopie (cs)
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| skos:notation
| - RIV/68378271:_____/09:00324998!RIV09-AV0-68378271
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| http://linked.open...avai/riv/aktivita
| |
| http://linked.open...avai/riv/aktivity
| - P(IAA100100902), P(LC06040), Z(AV0Z10100520), Z(AV0Z10100521)
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| http://linked.open...iv/cisloPeriodika
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| http://linked.open...vai/riv/dodaniDat
| |
| http://linked.open...aciTvurceVysledku
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| http://linked.open.../riv/druhVysledku
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| http://linked.open...iv/duvernostUdaju
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| http://linked.open...titaPredkladatele
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| http://linked.open...dnocenehoVysledku
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| http://linked.open...ai/riv/idVysledku
| - RIV/68378271:_____/09:00324998
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| http://linked.open...riv/jazykVysledku
| |
| http://linked.open.../riv/klicovaSlova
| - microcrystalline silicon; amorphous silicon; terahertz; ultrafast; photoconductivity (en)
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| http://linked.open.../riv/klicoveSlovo
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| http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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| http://linked.open...ontrolniKodProRIV
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| http://linked.open...i/riv/nazevZdroje
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| http://linked.open...in/vavai/riv/obor
| |
| http://linked.open...ichTvurcuVysledku
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| http://linked.open...cetTvurcuVysledku
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| http://linked.open...vavai/riv/projekt
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| http://linked.open...UplatneniVysledku
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| http://linked.open...v/svazekPeriodika
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| http://linked.open...iv/tvurceVysledku
| - Kužel, Petr
- Němec, Hynek
- Fejfar, Antonín
- Stuchlík, Jiří
- Fekete, Ladislav
- Kadlec, Filip
- Deyneka, Alexander
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| http://linked.open...ain/vavai/riv/wos
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| http://linked.open...n/vavai/riv/zamer
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| issn
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| number of pages
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| is http://linked.open...avai/riv/vysledek
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