About: Transport properties of microcrystalline silicon prepared at high growth rate

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Amorfní / mikrokrystalický přechod byl studován při depozicích hydrogenovaných křemíkových vrstev s vysokou růstovou rychlostí při vysokém tlaku (700 Pa) v režimu ochuzeného plazmatu za použití série vzorků s poměrem průtoků vodíku a silanu od 10 do 32 (cs) Amorphous / microcrystalline transition was studied in the high growth-rate depositions of hydrogenated silicon films at a high pressure (700 Pa) in a depletion regime using a series of samples with the ratio of hydrogen to silane flows from 10 to 32 Amorphous / microcrystalline transition was studied in the high growth-rate depositions of hydrogenated silicon films at a high pressure (700 Pa) in a depletion regime using a series of samples with the ratio of hydrogen to silane flows from 10 to 32 (en)
Title	Transport properties of microcrystalline silicon prepared at high growth rate Transportní vlastnosti mikrokrystalického křemíku připraveného s vysokou růstovou rychlostí (cs) Transport properties of microcrystalline silicon prepared at high growth rate (en)
skos:prefLabel	Transport properties of microcrystalline silicon prepared at high growth rate Transportní vlastnosti mikrokrystalického křemíku připraveného s vysokou růstovou rychlostí (cs) Transport properties of microcrystalline silicon prepared at high growth rate (en)
skos:notation	RIV/68378271:_____/06:00040655!RIV07-AV0-68378271
http://linked.open.../vavai/riv/strany	1092;1100
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GD202/05/H003), P(IAA1010316), P(IAA1010413), P(LC510), P(SM/300/1/03), Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	-
http://linked.open...vai/riv/dodaniDat	2007
http://linked.open...aciTvurceVysledku	Stuchlíková, The-Ha Fejfar, Antonín Ledinský, Martin Stuchlík, Jiří Mates, Tomáš Kočka, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	504283
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/06:00040655
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	amorphous semiconductors; silicon; crystal growth; nanocrystals; electrical and electronic properties; conductivity; atomic force and scanning tunneling microscopy; microcrystallinity; photoconductivity; Raman spectroscopy (en)
http://linked.open.../riv/klicoveSlovo	photoconductivity Raman spectroscopy conductivity crystal growth nanocrystals silicon atomic force and scanning tunneling microscopy amorphous semiconductors electrical and electronic properties microcrystallinity
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[99BF75D9EFFC]
http://linked.open...i/riv/nazevZdroje	Journal of Non-Crystalline Solids
http://linked.open...in/vavai/riv/obor	BL
http://linked.open...ichTvurcuVysledku	6 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Center of nanotechnology and materials for nanoelectronics Nanoscience and nanotechnology with scanning probe microscopes: from atomic processes to material properties Physics of complex condensed systems Reasech and development low cost technology of Solar Cells Microcrystalline and nanocrystalline semiconductors for photonics:Electronic processes on the scales of nanometers and femtoseconds
http://linked.open...UplatneniVysledku	2006
http://linked.open...v/svazekPeriodika	352
http://linked.open...iv/tvurceVysledku	Ledinský, Martin Fejfar, Antonín Stuchlík, Jiří Kočka, Jan Stuchlíková, The-Ha Mates, Tomáš
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	0022-3093
number of pages	4 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Transport properties of microcrystalline silicon prepared at high growth rate Transport properties of microcrystalline silicon prepared at high growth rate

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