About: Active optical control of the terahertz reflectivity of high-resistivity semiconductors     Goto   Sponge   NotDistinct   Permalink

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Description
  • Teoreticky a experimentálně ukazujeme možnost optické kontroly odrazivosti polovodičů v terahertové oblasti. Nosiče náboje generované optickým pulsem vtvářejí na povrchu polovodiče tenkou vodivou vrstvu, která mění jeho odrazivost. Změnami intenzity nebo vlnové délky optické excitace je možno spojitě ladit chování vzorku od antireflexního (R<3%) až po vysoce odrazivé (R>85%) (cs)
  • We study theoretically and demonstrate experimentally light-controllable terahertz reflectivity of high resistivity semiconductor wafers. Photocarriers created by interband light absorption form a thin conducting layer at the semiconductor surface, which allows the terahertz reflectivity of the element to be tuned between antireflective (R<3%) and highly reflective(R>85%) limits by means of the intensity and wave-length of the optical illumination
  • We study theoretically and demonstrate experimentally light-controllable terahertz reflectivity of high resistivity semiconductor wafers. Photocarriers created by interband light absorption form a thin conducting layer at the semiconductor surface, which allows the terahertz reflectivity of the element to be tuned between antireflective (R<3%) and highly reflective(R>85%) limits by means of the intensity and wave-length of the optical illumination (en)
Title
  • Active optical control of the terahertz reflectivity of high-resistivity semiconductors
  • Active optical control of the terahertz reflectivity of high-resistivity semiconductors (en)
  • Aktivní optické řízení terahertzové odrazivosti (cs)
skos:prefLabel
  • Active optical control of the terahertz reflectivity of high-resistivity semiconductors
  • Active optical control of the terahertz reflectivity of high-resistivity semiconductors (en)
  • Aktivní optické řízení terahertzové odrazivosti (cs)
skos:notation
  • RIV/68378271:_____/05:00029134!RIV06-AV0-68378271
http://linked.open.../vavai/riv/strany
  • 1992;1994
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(1ET300100401), P(KJB100100512), Z(AV0Z10100520)
http://linked.open...iv/cisloPeriodika
  • 15
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 511307
http://linked.open...ai/riv/idVysledku
  • RIV/68378271:_____/05:00029134
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • semiconductor; optoterahertz switch; photocarriers; antireflective (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [D3C8FB1FD49A]
http://linked.open...i/riv/nazevZdroje
  • Optics Letters
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 30
http://linked.open...iv/tvurceVysledku
  • Hlinka, Jiří
  • Kužel, Petr
  • Fekete, Ladislav
  • Kadlec, Filip
  • Mounaix, P.
http://linked.open...n/vavai/riv/zamer
issn
  • 0146-9592
number of pages
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