About: Monte-Carlo simulation of proximity effect in e-beam lithography

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	E–beam lithography is the most used pattern generation technique for academic and research prototyping. During this patterning by e–beam into resist layer, several effects occur which change the resolution of intended patterns. Proximity effect is the dominant one which causes that patterning areas adjacent to the beam incidence point are exposed due to electron scattering effects in solid state. This contribution deals with Monte Carlo simulation of proximity effect for various accelerating beam voltage (15 kV, 50 kV, 100 kV), typically used in e–beam writers. Proximity effect simulation were carried out in free software Casino and commercial software MCS Control Center, where each of electron trajectory can be simulated (modeled). The radial density of absorbed energy is calculated for PMMA resist with various settings of resist thickness and substrate material. At the end, coefficients of proximity effect function were calculated for beam energy of 15 keV, 50 keV and 100 keV which is desirable for proximity effect correction. E–beam lithography is the most used pattern generation technique for academic and research prototyping. During this patterning by e–beam into resist layer, several effects occur which change the resolution of intended patterns. Proximity effect is the dominant one which causes that patterning areas adjacent to the beam incidence point are exposed due to electron scattering effects in solid state. This contribution deals with Monte Carlo simulation of proximity effect for various accelerating beam voltage (15 kV, 50 kV, 100 kV), typically used in e–beam writers. Proximity effect simulation were carried out in free software Casino and commercial software MCS Control Center, where each of electron trajectory can be simulated (modeled). The radial density of absorbed energy is calculated for PMMA resist with various settings of resist thickness and substrate material. At the end, coefficients of proximity effect function were calculated for beam energy of 15 keV, 50 keV and 100 keV which is desirable for proximity effect correction. (en)
Title	Monte-Carlo simulation of proximity effect in e-beam lithography Monte-Carlo simulation of proximity effect in e-beam lithography (en)
skos:prefLabel	Monte-Carlo simulation of proximity effect in e-beam lithography Monte-Carlo simulation of proximity effect in e-beam lithography (en)
skos:notation	RIV/68081731:_____/13:00429792!RIV15-TA0-68081731
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(ED0017/01/01), P(EE.2.3.20.0103), P(TE01020233)
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Horáček, Miroslav Kolařík, Vladimír Matějka, Milan Urbánek, Michal Krátký, Stanislav Chlumská, Jana
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav přístrojové techniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	89514
http://linked.open...ai/riv/idVysledku	RIV/68081731:_____/13:00429792
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Monte–Carlo; proximity effect simulation; e–beam lithography (en)
http://linked.open.../riv/klicoveSlovo	Monte–Carlo e–beam lithography proximity effect simulation
http://linked.open...ontrolniKodProRIV	[C942DA791638]
http://linked.open...v/mistoKonaniAkce	Brno
http://linked.open...i/riv/mistoVydani	Ostrava
http://linked.open...i/riv/nazevZdroje	NANOCON 2013. 5th International conference proceedings
http://linked.open...in/vavai/riv/obor	BH
http://linked.open...ichTvurcuVysledku	6 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Advanced Microscopy and Spectroscopy Platform for Research and Development in Nano and Microtechnologies - AMISPEC Support for human resources and transfer of knowledge in conditions of international cooperation of research teams APPLICATION LABORATORIES OF ADVANCED MICROTECHNOLOGIES AND NANOTECHNOLOGIES
http://linked.open...UplatneniVysledku	2013
http://linked.open...iv/tvurceVysledku	Horáček, Miroslav Matějka, Milan Urbánek, Michal Kolařík, Vladimír Krátký, Stanislav Chlumská, Jana
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2013-10-16 (xsd:date)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	TANGER Ltd
https://schema.org/isbn	978-80-87294-47-5

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