About: Shaped E-beam nanopatterning with proximity effect correction

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Electron beam writer is a tool for writing patterns into a sensitive material (resist) in a high resolution. During the patterning, areas adjacent to the beam incidence point are exposed due to electron scattering effects in solid state (resist and the substrate). Consequently, this phenomenon, also called proximity effect, causes that the exposed pattern can be broader in comparison to the designed. In this contribution we present a software for proximity effect simulation and a software for proximity effect correction (PEC). The software is based on the model using the density of absorbed energy in resist layer and the model of resist development process. A simulation of proximity effect was carried out on binary lithography patterns, and consequently testing patterns were exposed with a corrected dose. As pattern generation, we used the e-beam writer TESLA BS 600 working with fixed energy 15keV and variable size rectangular shaped beam. The simulations of binary testing patterns and exposed patterns without PEC were compared. Finally, we compared the testing structures with PEC and without PEC, and we showed that the PEC tool works reliably for the e-beam writer BS 600. Electron beam writer is a tool for writing patterns into a sensitive material (resist) in a high resolution. During the patterning, areas adjacent to the beam incidence point are exposed due to electron scattering effects in solid state (resist and the substrate). Consequently, this phenomenon, also called proximity effect, causes that the exposed pattern can be broader in comparison to the designed. In this contribution we present a software for proximity effect simulation and a software for proximity effect correction (PEC). The software is based on the model using the density of absorbed energy in resist layer and the model of resist development process. A simulation of proximity effect was carried out on binary lithography patterns, and consequently testing patterns were exposed with a corrected dose. As pattern generation, we used the e-beam writer TESLA BS 600 working with fixed energy 15keV and variable size rectangular shaped beam. The simulations of binary testing patterns and exposed patterns without PEC were compared. Finally, we compared the testing structures with PEC and without PEC, and we showed that the PEC tool works reliably for the e-beam writer BS 600. (en)
Title	Shaped E-beam nanopatterning with proximity effect correction Shaped E-beam nanopatterning with proximity effect correction (en)
skos:prefLabel	Shaped E-beam nanopatterning with proximity effect correction Shaped E-beam nanopatterning with proximity effect correction (en)
skos:notation	RIV/68081731:_____/12:00390977!RIV13-AV0-68081731
http://linked.open...avai/predkladatel	Ústav přístrojové techniky AV ČR, v. v. i.
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(ED0017/01/01), P(FR-TI1/576), P(TE01020233)
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Bok, Jan Kolařík, Vladimír Matějka, František Matějka, Milan Urbánek, Michal
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav přístrojové techniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	167697
http://linked.open...ai/riv/idVysledku	RIV/68081731:_____/12:00390977
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	e-beam writer; shaped beam; proximity effect correction (en)
http://linked.open.../riv/klicoveSlovo	proximity effect correction shaped beam e-beam writer
http://linked.open...ontrolniKodProRIV	[FE6E41851B76]
http://linked.open...v/mistoKonaniAkce	Brno
http://linked.open...i/riv/mistoVydani	Ostrava
http://linked.open...i/riv/nazevZdroje	NANOCON 2012, 4th International Conference Proceedings
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	5 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...vavai/riv/projekt	Advanced Microscopy and Spectroscopy Platform for Research and Development in Nano and Microtechnologies - AMISPEC Optimization of electron-beam production technology APPLICATION LABORATORIES OF ADVANCED MICROTECHNOLOGIES AND NANOTECHNOLOGIES
http://linked.open...UplatneniVysledku	2012
http://linked.open...iv/tvurceVysledku	Matějka, Milan Urbánek, Michal Bok, Jan Kolařík, Vladimír Matějka, František Mikšík, P. Vašina, J.
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2012-10-23 (xsd:date)
number of pages	6 (xsd:int)
http://purl.org/ne...btex#hasPublisher	TANGER Ltd
https://schema.org/isbn	978-80-87294-32-1
is http://linked.open...avai/riv/vysledek of	Shaped E-beam nanopatterning with proximity effect correction

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