About: Secondary electron contrast in doped semiconductor with presence of a surface ad-layer

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The scanning electron microscopy (SEM) has proven itself efficient for determining dopant concentrations in semiconductors. Image contrast between differently doped areas is observable in the secondary electron emission. Multiple studies have revealed quantitative relations between the image contrast and dopant concentration. However, further examination shows the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of an ad-layer on the semiconductor surface. The scanning electron microscopy (SEM) has proven itself efficient for determining dopant concentrations in semiconductors. Image contrast between differently doped areas is observable in the secondary electron emission. Multiple studies have revealed quantitative relations between the image contrast and dopant concentration. However, further examination shows the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of an ad-layer on the semiconductor surface. (en)
Title	Secondary electron contrast in doped semiconductor with presence of a surface ad-layer Secondary electron contrast in doped semiconductor with presence of a surface ad-layer (en)
skos:prefLabel	Secondary electron contrast in doped semiconductor with presence of a surface ad-layer Secondary electron contrast in doped semiconductor with presence of a surface ad-layer (en)
skos:notation	RIV/68081731:_____/09:00335263!RIV10-AV0-68081731
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GP102/09/P543), P(IAA100650803), Z(AV0Z20650511)
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Hovorka, Miloš Mika, Filip Frank, Luděk
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav přístrojové techniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	340487
http://linked.open...ai/riv/idVysledku	RIV/68081731:_____/09:00335263
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	dopant contrast; secondary electrons; semiconductor (en)
http://linked.open.../riv/klicoveSlovo	dopant contrast secondary electrons semiconductor
http://linked.open...ontrolniKodProRIV	[A885467FACD7]
http://linked.open...v/mistoKonaniAkce	Graz
http://linked.open...i/riv/mistoVydani	Graz
http://linked.open...i/riv/nazevZdroje	MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Examination of contrast in doped semiconductors with scanning low energy microscope with ultimate parameters Coherent imaging of nanostructures in a low-energy scanning electron microscope with an area detector of electrons
http://linked.open...UplatneniVysledku	2009
http://linked.open...iv/tvurceVysledku	Hovorka, Miloš Frank, Luděk Mika, Filip
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2009-08-30 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Research into experimental methods for examination of the physical properties of matter and their application in advanced technologies
number of pages	2 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Verlag der Technischen Universität
https://schema.org/isbn	978-3-85125-062-6
is http://linked.open...avai/riv/vysledek of	Secondary electron contrast in doped semiconductor with presence of a surface ad-layer Secondary electron contrast in doped semiconductor with presence of a surface ad-layer Secondary electron contrast in doped semiconductor with presence of a surface ad-layer Secondary electron contrast in doped semiconductor with presence of a surface ad-layer

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