About: Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Mechanismy zodpovědné za kontrast mezi různě dopovanými oblastmi polovodiče, pozorovaný v elektronově mikroskopických snímcích, jsou diskutovány z hlediska klíčových faktorů určujících znaménko a velikost kontrastu. Je podán přehled experimentálních dat získaných pomocí rastrovacího elektronového mikroskopu (REM), rastrovacího nízkoenergiového elektronového mikroskopu a fotoelektronového emisního mikroskopu, spolu s návody, které odtud vyplývají pro sestavení modelu kontrastního mechanismu. (cs) Mechanisms responsible for the contrast between differently doped areas in semiconductors, which is observed in electron micrographs, is discussed as regards the key factors determining the sign and magnitude of the contrast. Experimental data obtained by means of the scanning electron microscope (SEM), scanning low energy electron microscope and photoelectron emission microscope are reviewed together with hints following from them for compilation of a model of the contrast mechanism. Mechanisms responsible for the contrast between differently doped areas in semiconductors, which is observed in electron micrographs, is discussed as regards the key factors determining the sign and magnitude of the contrast. Experimental data obtained by means of the scanning electron microscope (SEM), scanning low energy electron microscope and photoelectron emission microscope are reviewed together with hints following from them for compilation of a model of the contrast mechanism. (en)
Title	Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons (en) Kontrast dopantu jako interpretační problém při zobrazování elektrony (cs)
skos:prefLabel	Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons (en) Kontrast dopantu jako interpretační problém při zobrazování elektrony (cs)
skos:notation	RIV/68081731:_____/07:00082251!RIV07-AV0-68081731
http://linked.open.../vavai/riv/strany	936;939
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA202/04/0281), Z(AV0Z20650511)
http://linked.open...iv/cisloPeriodika	5
http://linked.open...vai/riv/dodaniDat	2007
http://linked.open...aciTvurceVysledku	Hovorka, Miloš Müllerová, Ilona Mika, Filip Frank, Luděk
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav přístrojové techniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	417953
http://linked.open...ai/riv/idVysledku	RIV/68081731:_____/07:00082251
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	electron microscopic contrasts; semiconductors; dopant contrast; scanning electron microscopy; scanning low energy electron microscopy; photoelectron emission microscopy (en)
http://linked.open.../riv/klicoveSlovo	scanning low energy electron microscopy dopant contrast electron microscopic contrasts photoelectron emission microscopy semiconductors scanning electron microscopy
http://linked.open...odStatuVydavatele	JP - Japonsko
http://linked.open...ontrolniKodProRIV	[9834F2169730]
http://linked.open...i/riv/nazevZdroje	Materials Transactions
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Mapping at a high spatial resolution of the local density of electron states via reflection of very slow electrons
http://linked.open...UplatneniVysledku	2007
http://linked.open...v/svazekPeriodika	48
http://linked.open...iv/tvurceVysledku	Hovorka, Miloš Müllerová, Ilona Frank, Luděk Mika, Filip Schönhense, G. Valdaitsev, D.
http://linked.open...n/vavai/riv/zamer	Research into experimental methods for examination of the physical properties of matter and their application in advanced technologies
issn	1345-9678
number of pages	4 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons Dopant Contrast in Semiconductors as Interpretation Challenge at Imaging by Electrons

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