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| rdf:type
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| Description
| - GaN layers with < 0001 > crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 x 10(15)-1 x 10(16) cm(-2). The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5 x 10(15) cm(-2) while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5 x 10(15) cm(-2) to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement.
- GaN layers with < 0001 > crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 x 10(15)-1 x 10(16) cm(-2). The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5 x 10(15) cm(-2) while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5 x 10(15) cm(-2) to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement. (en)
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| Title
| - A study of the structural properties of GaN implanted by various rare-earth ions
- A study of the structural properties of GaN implanted by various rare-earth ions (en)
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| skos:prefLabel
| - A study of the structural properties of GaN implanted by various rare-earth ions
- A study of the structural properties of GaN implanted by various rare-earth ions (en)
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| skos:notation
| - RIV/61389005:_____/13:00395263!RIV14-MSM-61389005
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| http://linked.open...avai/predkladatel
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| http://linked.open...avai/riv/aktivita
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| http://linked.open...avai/riv/aktivity
| - I, P(GA106/09/0125), P(LM2011019), S
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| http://linked.open...iv/cisloPeriodika
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| http://linked.open...vai/riv/dodaniDat
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| http://linked.open...aciTvurceVysledku
| |
| http://linked.open.../riv/druhVysledku
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| http://linked.open...iv/duvernostUdaju
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| http://linked.open...titaPredkladatele
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| http://linked.open...dnocenehoVysledku
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| http://linked.open...ai/riv/idVysledku
| - RIV/61389005:_____/13:00395263
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| http://linked.open...riv/jazykVysledku
| |
| http://linked.open.../riv/klicovaSlova
| - rare earth implantation; GaN; depth profiles; RBS; Raman spectroscopy; AFM (en)
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| http://linked.open.../riv/klicoveSlovo
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| http://linked.open...odStatuVydavatele
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| http://linked.open...ontrolniKodProRIV
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| http://linked.open...i/riv/nazevZdroje
| - Nuclear Instruments & Methods in Physics Research Section B
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| http://linked.open...in/vavai/riv/obor
| |
| http://linked.open...ichTvurcuVysledku
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| http://linked.open...cetTvurcuVysledku
| |
| http://linked.open...vavai/riv/projekt
| |
| http://linked.open...UplatneniVysledku
| |
| http://linked.open...v/svazekPeriodika
| |
| http://linked.open...iv/tvurceVysledku
| - Macková, Anna
- Malinský, Petr
- Mikulics, M.
- Sedmidubský, D.
- Sofer, Z.
- Šimek, P.
- Wilhelm, R. A.
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| http://linked.open...ain/vavai/riv/wos
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| issn
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| number of pages
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| http://bibframe.org/vocab/doi
| - 10.1016/j.nimb.2012.11.079
|
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