About: Growth and characterization of GaN:Mn layers by MOVPE

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We present a growth of Ga1_xMnxN layers by metalorganic vapor phase epitaxy (MOVPE). The analysis of the MOVPE deposition process of Ga1_xMnxN thin films revealed an unfavorable ratio between the apparent concentration of Mn in the gas phase and its doping level in the deposited layer. On the other hand, the incorporation of Mn has a positive effect on the resulting surface morphology. The optimal deposition temperature of 1000 1C was found out as a compromise between the layer quality and Mn concentration. We observed a ferromagnetic component persisting up to room temperature and a prevailing paramagnetic phase. We present a growth of Ga1_xMnxN layers by metalorganic vapor phase epitaxy (MOVPE). The analysis of the MOVPE deposition process of Ga1_xMnxN thin films revealed an unfavorable ratio between the apparent concentration of Mn in the gas phase and its doping level in the deposited layer. On the other hand, the incorporation of Mn has a positive effect on the resulting surface morphology. The optimal deposition temperature of 1000 1C was found out as a compromise between the layer quality and Mn concentration. We observed a ferromagnetic component persisting up to room temperature and a prevailing paramagnetic phase. (en)
Title	Growth and characterization of GaN:Mn layers by MOVPE Growth and characterization of GaN:Mn layers by MOVPE (en)
skos:prefLabel	Growth and characterization of GaN:Mn layers by MOVPE Growth and characterization of GaN:Mn layers by MOVPE (en)
skos:notation	RIV/61389005:_____/08:00340727!RIV10-AV0-61389005
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA104/06/0642), Z(AV0Z10100521), Z(AV0Z10480505), Z(MSM0021620834), Z(MSM6046137302)
http://linked.open...iv/cisloPeriodika	23
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Havránek, Vítězslav Macková, Anna
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav jaderné fyziky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	369670
http://linked.open...ai/riv/idVysledku	RIV/61389005:_____/08:00340727
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	metalorganic vapor-phase epitaxy; nitrides; magnetic materials (en)
http://linked.open.../riv/klicoveSlovo	magnetic materials nitrides metalorganic vapor-phase epitaxy
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[24CE989253E5]
http://linked.open...i/riv/nazevZdroje	Journal of Crystal Growth
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	9 (xsd:int)
http://linked.open...vavai/riv/projekt	Thin Films of Magnetically Doped A(iii)N Semiconductors for Spin Electronics Applications
http://linked.open...UplatneniVysledku	2008
http://linked.open...v/svazekPeriodika	310
http://linked.open...iv/tvurceVysledku	Havránek, Vladimír Macková, Anna Stejskal, J. Maryško, Miroslav Hejtmánek, Jiří Jurek, Karel Sedmidubský, D. Sofer, Z. Václavů, M.
http://linked.open...ain/vavai/riv/wos	000262019400077
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films Jaderná fyzika a příbuzné obory v základním, aplikovaném a interdisciplinárním výzkumu Condensed Matter Physics – New Materials and Technologies Preparation and research of functional materials and material technologies using micro- and nanoscopic methods
issn	0022-0248
number of pages	3 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Growth and characterization of GaN:Mn layers by MOVPE Growth and characterization of GaN:Mn layers by MOVPE Growth and characterization of GaN:Mn layers by MOVPE Growth and characterization of GaN:Mn layers by MOVPE

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