| Attributes | Values |
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| rdf:type
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| Description
| - Nové čtyřsložkové materiály Si-B-C-N se stávají atraktivními pro jejich možné aplikace ve vysokoteplotním a nepříznivém prostředí. V této práci byly amorfní vrstvy Si-B-C-N deponovány na substrátech Si a SiC. (cs)
- Novel quaternary Si-B-C-N materials are becoming increasingly attractive because of their possible high-temperature and harsh-environment applications. In the present work, amorphous Si-B-C-N films were deposited on Si and SiC substrates by reactive dc magnetron cosputtering using a single C-Si -B or B4C-Si target in nitrogen-argon gas mixtures. A fixed 75% Si fraction in the target erosion areas, a rf induced negative substrate bias voltage of -100 V, a substrate temperature of 350 degrees C, and a total pressure of 0.5 Pa were used in the depositions. The corresponding discharge and deposition characteristics (such as the ion-to-film-forming particle flux ratio, ion energy per deposited atom, and deposition rate) are presented to understand complex relationships between process parameters and film characteristics. Films deposited under optimized conditions (B4C-Si target, 50% N-2+50% Ar gas mixture), possessing a composition (in at. %).
- Novel quaternary Si-B-C-N materials are becoming increasingly attractive because of their possible high-temperature and harsh-environment applications. In the present work, amorphous Si-B-C-N films were deposited on Si and SiC substrates by reactive dc magnetron cosputtering using a single C-Si -B or B4C-Si target in nitrogen-argon gas mixtures. A fixed 75% Si fraction in the target erosion areas, a rf induced negative substrate bias voltage of -100 V, a substrate temperature of 350 degrees C, and a total pressure of 0.5 Pa were used in the depositions. The corresponding discharge and deposition characteristics (such as the ion-to-film-forming particle flux ratio, ion energy per deposited atom, and deposition rate) are presented to understand complex relationships between process parameters and film characteristics. Films deposited under optimized conditions (B4C-Si target, 50% N-2+50% Ar gas mixture), possessing a composition (in at. %). (en)
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| Title
| - Magnetron sputtered Si-B-C-N films with high oxidation resistance and thermal stability in air at temperatures above 1500 degrees C
- Magnetron sputtered Si-B-C-N films with high oxidation resistance and thermal stability in air at temperatures above 1500 degrees C (en)
- Magnetronem nastříkané vrstvy Si-B-C-N s vysokou oxidační odolností a tepelnou stabilitou na vzduchu při teplotách nad 1500 stupňů C (cs)
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| skos:prefLabel
| - Magnetron sputtered Si-B-C-N films with high oxidation resistance and thermal stability in air at temperatures above 1500 degrees C
- Magnetron sputtered Si-B-C-N films with high oxidation resistance and thermal stability in air at temperatures above 1500 degrees C (en)
- Magnetronem nastříkané vrstvy Si-B-C-N s vysokou oxidační odolností a tepelnou stabilitou na vzduchu při teplotách nad 1500 stupňů C (cs)
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| skos:notation
| - RIV/61389005:_____/08:00313775!RIV09-AV0-61389005
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| http://linked.open...avai/riv/aktivita
| |
| http://linked.open...avai/riv/aktivity
| - Z(AV0Z10480505), Z(MSM4977751302)
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| http://linked.open...iv/cisloPeriodika
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| http://linked.open...vai/riv/dodaniDat
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| http://linked.open...aciTvurceVysledku
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| http://linked.open.../riv/druhVysledku
| |
| http://linked.open...iv/duvernostUdaju
| |
| http://linked.open...titaPredkladatele
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| http://linked.open...dnocenehoVysledku
| |
| http://linked.open...ai/riv/idVysledku
| - RIV/61389005:_____/08:00313775
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| http://linked.open...riv/jazykVysledku
| |
| http://linked.open.../riv/klicovaSlova
| - ceramics; behavior; system (en)
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| http://linked.open.../riv/klicoveSlovo
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| http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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| http://linked.open...ontrolniKodProRIV
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| http://linked.open...i/riv/nazevZdroje
| - Journal of Vacuum Science & Technology A : Vacuum, Surfaces and Films
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| http://linked.open...in/vavai/riv/obor
| |
| http://linked.open...ichTvurcuVysledku
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| http://linked.open...cetTvurcuVysledku
| |
| http://linked.open...UplatneniVysledku
| |
| http://linked.open...v/svazekPeriodika
| |
| http://linked.open...iv/tvurceVysledku
| - Peřina, Vratislav
- Vlček, J.
- Čapek, J.
- Čerstvý, R.
- Zeman, P.
- Hřeben, S.
- Kalas, J.
- Setsuhara, Y.
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| http://linked.open...ain/vavai/riv/wos
| |
| http://linked.open...n/vavai/riv/zamer
| |
| issn
| |
| number of pages
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| is http://linked.open...avai/riv/vysledek
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