About: Influence of substrate bias voltage on structure and properties of hard Si-B-C-N films prepared by reactive magnetron sputtering

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About: Influence of substrate bias voltage on structure and properties of hard Si-B-C-N films prepared by reactive magnetron sputtering Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Vliv substrátu a elektrického předpětí na strukturu tvrdého SI-B-C-N film připravovaného reaktivním magnetronovým stříkáním. (cs) We systematically investigated the effect of the rf induced negative substrate bias voltage, U-b, on characteristics of novel quaternary Si-B-C-N films. The films were deposited on Si(I 00) or glass substrates by reactive de magnetron co-sputtering of silicon, boron and carbon from a single C-Si-B or B4C-Si target in nitrogen-argon gas mixtures at substrate temperatures of 180-350 degrees C. Elemental compositions of the films, their surface bonding structure, and mechanical and electrical properties were primarily controlled by the U-b values, varied from a floating potential (being between -30 and -40 V) to U-b = -700 V The energy and flux of ions bombarding the target and the growing films were evaluated on the basis of the measured discharge characteristics. The films were found to be amorphous with thickness up to 5 gm and density around 2.4 g/cm(.)(3) They exhibited hardness up to 44 GPa, modified Young's modulus between 170 and 280 GPa. We systematically investigated the effect of the rf induced negative substrate bias voltage, U-b, on characteristics of novel quaternary Si-B-C-N films. The films were deposited on Si(I 00) or glass substrates by reactive de magnetron co-sputtering of silicon, boron and carbon from a single C-Si-B or B4C-Si target in nitrogen-argon gas mixtures at substrate temperatures of 180-350 degrees C. Elemental compositions of the films, their surface bonding structure, and mechanical and electrical properties were primarily controlled by the U-b values, varied from a floating potential (being between -30 and -40 V) to U-b = -700 V The energy and flux of ions bombarding the target and the growing films were evaluated on the basis of the measured discharge characteristics. The films were found to be amorphous with thickness up to 5 gm and density around 2.4 g/cm(.)(3) They exhibited hardness up to 44 GPa, modified Young's modulus between 170 and 280 GPa. (en)
Title	Influence of substrate bias voltage on structure and properties of hard Si-B-C-N films prepared by reactive magnetron sputtering Influence of substrate bias voltage on structure and properties of hard Si-B-C-N films prepared by reactive magnetron sputtering (en) Vliv elektrického předpětí substrátu na strukturu tvrdého SI-B-C-N filmu připraveného reaktivním magnetronovým stříkáním (cs)
skos:prefLabel	Influence of substrate bias voltage on structure and properties of hard Si-B-C-N films prepared by reactive magnetron sputtering Influence of substrate bias voltage on structure and properties of hard Si-B-C-N films prepared by reactive magnetron sputtering (en) Vliv elektrického předpětí substrátu na strukturu tvrdého SI-B-C-N filmu připraveného reaktivním magnetronovým stříkáním (cs)
skos:notation	RIV/61389005:_____/07:00097603!RIV08-AV0-61389005
http://linked.open.../vavai/riv/strany	29;36
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(AV0Z10480505), Z(MSM4977751302)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2008
http://linked.open...aciTvurceVysledku	Peřina, Vratislav
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav jaderné fyziky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	426411
http://linked.open...ai/riv/idVysledku	RIV/61389005:_____/07:00097603
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	: HIGH-TEMPERATURE DEFORMATION (en)
http://linked.open.../riv/klicoveSlovo	: HIGH-TEMPERATURE DEFORMATION
http://linked.open...odStatuVydavatele	CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV	[12CB0494C537]
http://linked.open...i/riv/nazevZdroje	Diamond and Related Materials
http://linked.open...in/vavai/riv/obor	BG
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...UplatneniVysledku	2007
http://linked.open...v/svazekPeriodika	16
http://linked.open...iv/tvurceVysledku	Peřina, Vratislav Vlček, J. Houska, J. Potocký, S.
http://linked.open...n/vavai/riv/zamer	Jaderná fyzika a příbuzné obory v základním, aplikovaném a interdisciplinárním výzkumu Procesy ve výbojovém plazmatu a nové tenkovrstvé materiály s unikátními vlastnostmi
issn	0925-9635
number of pages	8 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Influence of substrate bias voltage on structure and properties of hard Si-B-C-N films prepared by reactive magnetron sputtering Influence of substrate bias voltage on structure and properties of hard Si-B-C-N films prepared by reactive magnetron sputtering Influence of substrate bias voltage on structure and properties of hard Si-B-C-N films prepared by reactive magnetron sputtering

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