| Attributes | Values |
|---|
| rdf:type
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| Description
| - S použitím výsledků přípravy C-N a Si-C-N vrstev byly systematicky zkoumány tvrdé materiály Si-B-C-N. Příprava byla prováděna magnetronovým naprašováním z C-Si-B terčíku ve směsi dusíku a argonu na p-Si(100) podložky. Složení vrstev, jejich chemické vazby a tím i mechanické vlastnosti spolu s oxidační odolností byly řízeny poměrem křemíku v terčíku, poměrem argonu k dusíku v plynné atmosféře, záporným předpětím a teplotou podložky. Tlak plynné směsi a výbojový prod magnetronu byly konstantní (0.5 Pa a 1 A). Byly měřeny výbojové charakteristiky v depoziční zóně včetně složení toku dopadajících iontů. Výsledné vrstvy měly tlouštky od 1 do 2.4 mikronu, hustoty ~ 2.4g/cm3 , hladký povrch, amorfní nanostrukturu, dobrou adhesi k substrátu při malém napětí. Vrstvy byly velmi tvrdé (do 47 Gpa), pružné a vzdorovaly oxidaci do dosažitelné teploty 1350oC. (cs)
- : Based on the results obtained for C-N and Si-C-N films, a systematic investigation of reactive magnetron sputtering of hard quaternary Si-B-C-N materials has been carried out. The Si-B-C-N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering using a single C-Si-B target (at a fixed 20% boron fraction in the target erosion area) in nitrogen-argon gas mixtures. Elemental compositions of the films, their surface bonding structure and mechanical properties, together with their oxidation resistance in air, were controlled by the Si fraction (5-75%) in the magnetron target erosion area, the Ar fraction (0-75%) in the gas mixture, the rf induced negative substrate bias voltage (from a floating potential to -500 V) and the substrate temperature (180-350 degrees C). The total pressure and the discharge current on the magnetron target were held constant at 0.5 Pa and 1 A, respectively.
- : Based on the results obtained for C-N and Si-C-N films, a systematic investigation of reactive magnetron sputtering of hard quaternary Si-B-C-N materials has been carried out. The Si-B-C-N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering using a single C-Si-B target (at a fixed 20% boron fraction in the target erosion area) in nitrogen-argon gas mixtures. Elemental compositions of the films, their surface bonding structure and mechanical properties, together with their oxidation resistance in air, were controlled by the Si fraction (5-75%) in the magnetron target erosion area, the Ar fraction (0-75%) in the gas mixture, the rf induced negative substrate bias voltage (from a floating potential to -500 V) and the substrate temperature (180-350 degrees C). The total pressure and the discharge current on the magnetron target were held constant at 0.5 Pa and 1 A, respectively. (en)
|
| Title
| - Reactive magnetron sputtering of hard Si-B-C-N films with a high-temperature oxidation resistance
- Reaktivní magnetronové naprašování tvrdých Si-C-B-N vrstev s vysoceteplotní oxidační odolností (cs)
- Reactive magnetron sputtering of hard Si-B-C-N films with a high-temperature oxidation resistance (en)
|
| skos:prefLabel
| - Reactive magnetron sputtering of hard Si-B-C-N films with a high-temperature oxidation resistance
- Reaktivní magnetronové naprašování tvrdých Si-C-B-N vrstev s vysoceteplotní oxidační odolností (cs)
- Reactive magnetron sputtering of hard Si-B-C-N films with a high-temperature oxidation resistance (en)
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| skos:notation
| - RIV/61389005:_____/05:00029512!RIV06-AV0-61389005
|
| http://linked.open.../vavai/riv/strany
| |
| http://linked.open...avai/riv/aktivita
| |
| http://linked.open...avai/riv/aktivity
| - Z(AV0Z10480505), Z(MSM4977751302)
|
| http://linked.open...iv/cisloPeriodika
| |
| http://linked.open...vai/riv/dodaniDat
| |
| http://linked.open...aciTvurceVysledku
| |
| http://linked.open.../riv/druhVysledku
| |
| http://linked.open...iv/duvernostUdaju
| |
| http://linked.open...titaPredkladatele
| |
| http://linked.open...dnocenehoVysledku
| |
| http://linked.open...ai/riv/idVysledku
| - RIV/61389005:_____/05:00029512
|
| http://linked.open...riv/jazykVysledku
| |
| http://linked.open.../riv/klicovaSlova
| - precursor-derived ceramics; carbon nitride films; thin-films (en)
|
| http://linked.open.../riv/klicoveSlovo
| |
| http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
|
| http://linked.open...ontrolniKodProRIV
| |
| http://linked.open...i/riv/nazevZdroje
| - Journal of Vacuum Science&Technology
|
| http://linked.open...in/vavai/riv/obor
| |
| http://linked.open...ichTvurcuVysledku
| |
| http://linked.open...cetTvurcuVysledku
| |
| http://linked.open...UplatneniVysledku
| |
| http://linked.open...v/svazekPeriodika
| |
| http://linked.open...iv/tvurceVysledku
| - Kormunda, M.
- Zeman, Pavel
- Peřina, Vratislav
- Vlček, J.
- Zemek, J.
- Čížek, J.
- Houska, J.
- Setsuhara, Y.
- Potocký, T.
|
| http://linked.open...n/vavai/riv/zamer
| |
| issn
| |
| number of pages
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| is http://linked.open...avai/riv/vysledek
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