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| rdf:type
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| Description
| - GaN is a wide direct band-gap (E-g similar to 3.4 eV) semiconductor which is attractive for optical devices. Trivalent erbium (Er3+) is an efficient luminescent centre with an atom-like emission at 1540 nm. Typical GaN thin films are fabricated by chemical gas-phase deposition or by epitaxy. Our GaN films were deposited by RF magnetron sputtering using gallium targets and a 3:7 nitrogen-argon mixture. The thickness of the deposited samples was typically 1-2 mum. For Er doping, pellets of metallic Er were put on top of the Ga target. The goal of erbium doping is to reach a concentration sufficient for optical activity. The composition of prepared layers was checked by nuclear analytical methods. The GaN stoichiometry, O admixture and Er dopant up to depths of 600 nm was checked by RBS using 2.4 MeV protons and 2.2 MeV alpha particles. The H impurity was checked by ERDA with 2.7 MeV alpha particles. The structure of fabricated GaN films was checked by x-ray diffraction, Raman spectros...
- GaN is a wide direct band-gap (E-g similar to 3.4 eV) semiconductor which is attractive for optical devices. Trivalent erbium (Er3+) is an efficient luminescent centre with an atom-like emission at 1540 nm. Typical GaN thin films are fabricated by chemical gas-phase deposition or by epitaxy. Our GaN films were deposited by RF magnetron sputtering using gallium targets and a 3:7 nitrogen-argon mixture. The thickness of the deposited samples was typically 1-2 mum. For Er doping, pellets of metallic Er were put on top of the Ga target. The goal of erbium doping is to reach a concentration sufficient for optical activity. The composition of prepared layers was checked by nuclear analytical methods. The GaN stoichiometry, O admixture and Er dopant up to depths of 600 nm was checked by RBS using 2.4 MeV protons and 2.2 MeV alpha particles. The H impurity was checked by ERDA with 2.7 MeV alpha particles. The structure of fabricated GaN films was checked by x-ray diffraction, Raman spectros... (en)
- GaN je širokopásmový (E-g 3,4 eV) polovodič, který je vhodný pro optická zařízení. Trojmocné erbium (Er3+) je účinným luminiscenčním centrem s emisí podobnou atomové při 1540 nm. Typická příprava tenkých GaN vrstev je prováděna chemickou depozicí z plynné fáze nebo epitaxním růstem. Neše vrstvy jsou nanášeny rf magnetronovým naprašováním z galiového terčíku ve směsi argonu a dusíku 7 : 3. Typická tlouštka vrstev je 1 - 2 mikrometru. Pro dopováni erbiem jsou na povrch Ga terčíku umístěny tablety kovového erbia. Účelem je dosáhnout dostatečné koncentrace vhodné pro optickou aktivitu. Složení připravených vrstev je měřeno nukleárními analytickými metodami. Stechiometrie GaN, příměs kyslíku a hloubkový profil erbia do hloubky 600 nm byl sledován pomocí RBS s 2.4 Mev protony a 2.2 MeV alfa částicemi. Příměs vodíku byla sledována metodou ERDA s 2.7 MeV alfa částicemi. Struktura připravených GaN vrstev byla zjišťována pomocí rentgenovské difrakce, Ramanovské spe... (cs)
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| Title
| - Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium
- Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium (en)
- Vlastnosti RF magnetronově naprášených galium-nitridových polovodičů (cs)
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| skos:prefLabel
| - Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium
- Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium (en)
- Vlastnosti RF magnetronově naprášených galium-nitridových polovodičů (cs)
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| skos:notation
| - RIV/61389005:_____/04:00105579!RIV/2005/GA0/A49005/N
|
| http://linked.open.../vavai/riv/strany
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| http://linked.open...avai/riv/aktivita
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| http://linked.open...avai/riv/aktivity
| - P(GA104/03/0385), P(GA104/03/0387), Z(AV0Z1048901)
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| http://linked.open...iv/cisloPeriodika
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| http://linked.open...vai/riv/dodaniDat
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| http://linked.open...aciTvurceVysledku
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| http://linked.open.../riv/druhVysledku
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| http://linked.open...iv/duvernostUdaju
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| http://linked.open...titaPredkladatele
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| http://linked.open...dnocenehoVysledku
| |
| http://linked.open...ai/riv/idVysledku
| - RIV/61389005:_____/04:00105579
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| http://linked.open...riv/jazykVysledku
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| http://linked.open.../riv/klicovaSlova
| - Er-doped GaN;luminescence;magnetron sputtering (en)
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| http://linked.open.../riv/klicoveSlovo
| |
| http://linked.open...odStatuVydavatele
| - GB - Spojené království Velké Británie a Severního Irska
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| http://linked.open...ontrolniKodProRIV
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| http://linked.open...i/riv/nazevZdroje
| - Surface and Interface Analysis
|
| http://linked.open...in/vavai/riv/obor
| |
| http://linked.open...ichTvurcuVysledku
| |
| http://linked.open...cetTvurcuVysledku
| |
| http://linked.open...vavai/riv/projekt
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| http://linked.open...UplatneniVysledku
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| http://linked.open...v/svazekPeriodika
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| http://linked.open...iv/tvurceVysledku
| - Hnatowicz, Vladimír
- Macková, Anna
- Matějka, P.
- Peřina, Vratislav
- Machovič, V.
- Prajzler, V.
- Schröfel, J.
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| http://linked.open...n/vavai/riv/zamer
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| issn
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| number of pages
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