About: Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Micro-photoluminescence (mu-PL) studies were performed on AlGaN/GaN heterostructure field effect transistors (HFETs) with different gate-recessing depths. It was found that mu-PL is the method of choice for detecting dry etching damage and simultaneously recording strain and stress in the HFET GaN layer. Lateral sub-mu m resolved mapping shows that the strain in the GaN layer after recessing is partially relaxed and non-uniform. Micro-photoluminescence (mu-PL) studies were performed on AlGaN/GaN heterostructure field effect transistors (HFETs) with different gate-recessing depths. It was found that mu-PL is the method of choice for detecting dry etching damage and simultaneously recording strain and stress in the HFET GaN layer. Lateral sub-mu m resolved mapping shows that the strain in the GaN layer after recessing is partially relaxed and non-uniform. (en)
Title	Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements (en)
skos:prefLabel	Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements (en)
skos:notation	RIV/60461373:22310/12:43893558!RIV13-MSM-22310___
http://linked.open...avai/predkladatel	Fakulta chemické technologie
http://linked.open...avai/riv/aktivita	S Z
http://linked.open...avai/riv/aktivity	S, Z(MSM6046137302)
http://linked.open...iv/cisloPeriodika	10
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Sofer, Zdeněk Šimek, Petr
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	154447
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/12:43893558
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	DC; HFETS; HEMTS; TRANSISTORS; PERFORMANCE; PHOTOLUMINESCENCE; HETEROSTRUCTURES; ETCHING PROCESS (en)
http://linked.open.../riv/klicoveSlovo	DC PERFORMANCE ETCHING PROCESS HEMTS HETEROSTRUCTURES HFETS PHOTOLUMINESCENCE TRANSISTORS
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[C2E9553AE5C5]
http://linked.open...i/riv/nazevZdroje	Semiconductor Science and Technology
http://linked.open...in/vavai/riv/obor	CA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	10 (xsd:int)
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	27
http://linked.open...iv/tvurceVysledku	Sofer, Zdeněk Šimek, Petr Mikulics, M. Hardtdegen, H. Grutzmacher, D. Gregušová, D. Kordos, P. Luth, H. Marso, M. Trellenkamp, S.
http://linked.open...ain/vavai/riv/wos	000309111800010
http://linked.open...n/vavai/riv/zamer	Preparation and research of functional materials and material technologies using micro- and nanoscopic methods
issn	0268-1242
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1088/0268-1242/27/10/105008
http://localhost/t...ganizacniJednotka	22310
is http://linked.open...avai/riv/vysledek of	Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements

Faceted Search & Find service v1.16.118 as of Jun 21 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3240 as of Jun 21 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 41 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software