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Description
| - Micro-photoluminescence (mu-PL) studies were performed on AlGaN/GaN heterostructure field effect transistors (HFETs) with different gate-recessing depths. It was found that mu-PL is the method of choice for detecting dry etching damage and simultaneously recording strain and stress in the HFET GaN layer. Lateral sub-mu m resolved mapping shows that the strain in the GaN layer after recessing is partially relaxed and non-uniform.
- Micro-photoluminescence (mu-PL) studies were performed on AlGaN/GaN heterostructure field effect transistors (HFETs) with different gate-recessing depths. It was found that mu-PL is the method of choice for detecting dry etching damage and simultaneously recording strain and stress in the HFET GaN layer. Lateral sub-mu m resolved mapping shows that the strain in the GaN layer after recessing is partially relaxed and non-uniform. (en)
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Title
| - Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements
- Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements (en)
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skos:prefLabel
| - Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements
- Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements (en)
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skos:notation
| - RIV/60461373:22310/12:43893558!RIV13-MSM-22310___
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http://linked.open...avai/predkladatel
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/60461373:22310/12:43893558
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - DC; HFETS; HEMTS; TRANSISTORS; PERFORMANCE; PHOTOLUMINESCENCE; HETEROSTRUCTURES; ETCHING PROCESS (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - GB - Spojené království Velké Británie a Severního Irska
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Semiconductor Science and Technology
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Sofer, Zdeněk
- Šimek, Petr
- Mikulics, M.
- Hardtdegen, H.
- Grutzmacher, D.
- Gregušová, D.
- Kordos, P.
- Luth, H.
- Marso, M.
- Trellenkamp, S.
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http://linked.open...ain/vavai/riv/wos
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://bibframe.org/vocab/doi
| - 10.1088/0268-1242/27/10/105008
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http://localhost/t...ganizacniJednotka
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is http://linked.open...avai/riv/vysledek
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