About: Measurement of thermal properties of thin films up to high temperatures - pulsed photothermal radiometry system and Si-B-C-N films     Goto   Sponge   NotDistinct   Permalink

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Description
  • A new arrangement of two-detector pulsed photothermal radiometry measurement system has been developed enabling temperature dependence measurement of thermal properties of thin films up to high temperatures. The system enables simultaneous determination of the thin film effusivity, thermal conductivity, and volumetric specific heat in the temperature range from room temperature to 600 °C. The samples are placed in a vacuum chamber. The temperatures in the system were verified by an independent measurement and the system was tested on known bulk samples. Advantages and shortcomings of the method are described and discussed. Furthermore, Si-B-C-N thin films were studied. These amorphous ceramic materials possess an interesting set of mechanical and thermal properties. In the studied temperature range, from 20 to 600 °C, both the thermal conductivity and volumetric specific heat increased with increasing temperature.
  • A new arrangement of two-detector pulsed photothermal radiometry measurement system has been developed enabling temperature dependence measurement of thermal properties of thin films up to high temperatures. The system enables simultaneous determination of the thin film effusivity, thermal conductivity, and volumetric specific heat in the temperature range from room temperature to 600 °C. The samples are placed in a vacuum chamber. The temperatures in the system were verified by an independent measurement and the system was tested on known bulk samples. Advantages and shortcomings of the method are described and discussed. Furthermore, Si-B-C-N thin films were studied. These amorphous ceramic materials possess an interesting set of mechanical and thermal properties. In the studied temperature range, from 20 to 600 °C, both the thermal conductivity and volumetric specific heat increased with increasing temperature. (en)
Title
  • Measurement of thermal properties of thin films up to high temperatures - pulsed photothermal radiometry system and Si-B-C-N films
  • Measurement of thermal properties of thin films up to high temperatures - pulsed photothermal radiometry system and Si-B-C-N films (en)
skos:prefLabel
  • Measurement of thermal properties of thin films up to high temperatures - pulsed photothermal radiometry system and Si-B-C-N films
  • Measurement of thermal properties of thin films up to high temperatures - pulsed photothermal radiometry system and Si-B-C-N films (en)
skos:notation
  • RIV/49777513:23520/10:00503774!RIV11-MSM-23520___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM4977751302)
http://linked.open...iv/cisloPeriodika
  • 12
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 270059
http://linked.open...ai/riv/idVysledku
  • RIV/49777513:23520/10:00503774
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • thermal conductivity; specific heat; thin films; Si-B-C-N; pulsed photothermal radiometry; temperature dependence; measurement (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [7B3CFC7CC5D1]
http://linked.open...i/riv/nazevZdroje
  • Review of Scientific Instruments
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 81
http://linked.open...iv/tvurceVysledku
  • Martan, Jiří
  • Čapek, Jiří
  • Amin Chalhoub, Eliane
http://linked.open...n/vavai/riv/zamer
issn
  • 0034-6748
number of pages
http://localhost/t...ganizacniJednotka
  • 23520
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