About: New quaternary Si-B-C-N films prepared by reactive magnetron sputtering     Goto   Sponge   NotDistinct   Permalink

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  • Novel quaternary Si-B-C-N films were fabricated using dc magnetron co-sputtering of silicon, boron and carbon from a single C-Si-B or B4C-Si target in nitrogen-argon gas mixtures at substrate temperatures of 180-350 °C. The films, typically 2-5 µm thick, were found to be amorphous in nanostructure with a low compressive stress (around 1 GPa) and good adhesion to substrates. They exhibited high hardness (up to 45 GPa) and elastic recovery (up to 85%), and extremely high oxidation resistance in air at elevated temperatures (up to a 1350 °C substrate limit).
  • Novel quaternary Si-B-C-N films were fabricated using dc magnetron co-sputtering of silicon, boron and carbon from a single C-Si-B or B4C-Si target in nitrogen-argon gas mixtures at substrate temperatures of 180-350 °C. The films, typically 2-5 µm thick, were found to be amorphous in nanostructure with a low compressive stress (around 1 GPa) and good adhesion to substrates. They exhibited high hardness (up to 45 GPa) and elastic recovery (up to 85%), and extremely high oxidation resistance in air at elevated temperatures (up to a 1350 °C substrate limit). (en)
  • Článek se zabývá novými kvaternárními materiály Si-B-C-N připravenými ve formě tenkých vrstev pomocí reaktivního magnetronového rozprašování křemíku, uhlíku a bóru ve směsích dusík-argon. Materiály vykázaly při amorfní nanostruktuře velmi nízké tlakové pnutí, dobrou adhezi k substrátům, vysokou tvrdost a elastické zotavení a extrémně vysokou oxidační odolnost ve vzduchu za teplot do 1350°C. (cs)
Title
  • New quaternary Si-B-C-N films prepared by reactive magnetron sputtering
  • New quaternary Si-B-C-N films prepared by reactive magnetron sputtering (en)
  • Nové kvaternární tenké vrstvy Si-B-C-N připravené reaktivním magnetronovým naprašováním (cs)
skos:prefLabel
  • New quaternary Si-B-C-N films prepared by reactive magnetron sputtering
  • New quaternary Si-B-C-N films prepared by reactive magnetron sputtering (en)
  • Nové kvaternární tenké vrstvy Si-B-C-N připravené reaktivním magnetronovým naprašováním (cs)
skos:notation
  • RIV/49777513:23520/06:00000511!RIV07-MSM-23520___
http://linked.open.../vavai/riv/strany
  • 447
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM4977751302)
http://linked.open...iv/cisloPeriodika
  • 0
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 488591
http://linked.open...ai/riv/idVysledku
  • RIV/49777513:23520/06:00000511
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Si-B-C-N; magnetron co-sputtering; mechanical properties; high-temperature stability; nanostructure (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • JP - Japonsko
http://linked.open...ontrolniKodProRIV
  • [550B9DC83B4D]
http://linked.open...i/riv/nazevZdroje
  • Transactions of the Materials Research Society of Japan
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Houška, Jiří
  • Zeman, Petr
  • Vlček, Jaroslav
  • Peřina, Vratislav
  • Potocký, Štěpán
  • Setsuhara, Yuichi
http://linked.open...n/vavai/riv/zamer
issn
  • 1382-3469
number of pages
http://localhost/t...ganizacniJednotka
  • 23520
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