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Description
| - An unusual pattern of the Oxidation Induced Stacking Faults (OISF) in the heavily boron-doped silicon is reported. Instead of the commonly reported simple OISF ring, we observe a banded OISF pattern. The pattern reflects the distribution of residual vacancies as it is described by Voronkov and Falster [J. Crystal Growth 204 (1999) 462]. We show that the oxygen precipitates in the L- and H- bands grow to an abnormally large size during the crystal growth and which serve as the OISF nuclei during subsequent wafer oxidation. It is concluded that a combination of the high boron, oxygen and vacancy concentration is responsible for the enhanced oxygen precipitation during the crystal growth.
- An unusual pattern of the Oxidation Induced Stacking Faults (OISF) in the heavily boron-doped silicon is reported. Instead of the commonly reported simple OISF ring, we observe a banded OISF pattern. The pattern reflects the distribution of residual vacancies as it is described by Voronkov and Falster [J. Crystal Growth 204 (1999) 462]. We show that the oxygen precipitates in the L- and H- bands grow to an abnormally large size during the crystal growth and which serve as the OISF nuclei during subsequent wafer oxidation. It is concluded that a combination of the high boron, oxygen and vacancy concentration is responsible for the enhanced oxygen precipitation during the crystal growth. (en)
- Předmětem studia byl neobvyklý charakter Oxidation Induced Stacking Faults (OISF - oxidací vyvolané vrstevné chyby) v křemíku silně legovaném bórem. Místo běžně uváděného jednoduchého OISF ringu jsme pozoroval OISF ring s pásovou strukturou. Pásy odpovídají rozložení zbytkových vakancí (oronkov and Falster [J. Crystal Growth 204 (1999) 462]). Ukazujeme, že kyslíkové precipitáty v L a H pásu rostou v abnormálních velikostech a tvoří zárodky OISF během následující oxidace křemíkové desky. Dokázali jsme, že kombinace vysoké koncentrace bóru, kyslíku a vakancí vyvolává zvýšenou precipitaci kyslíku během růstu krystalů. (cs)
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Title
| - Zvýšená precipitace kyslíku při Czochralskiho tažení krystalů (cs)
- Enhanced Oxygen Precipitation during the Czochralski Crystal Growth
- Enhanced Oxygen Precipitation during the Czochralski Crystal Growth (en)
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skos:prefLabel
| - Zvýšená precipitace kyslíku při Czochralskiho tažení krystalů (cs)
- Enhanced Oxygen Precipitation during the Czochralski Crystal Growth
- Enhanced Oxygen Precipitation during the Czochralski Crystal Growth (en)
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skos:notation
| - RIV/26821532:_____/08:#0000003!RIV08-MPO-26821532
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/26821532:_____/08:#0000003
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Silicon, defects, boron, oxygen, precipitation (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - CH - Švýcarská konfederace
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
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issn
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number of pages
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