About: OISF Pattern and Grown-in Precipitates in Heavily Boron Doped Silicon

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Studujeme strukturu vrstevných chyb vyvolaných oxidací (OISF) v křemíku silně legovaném bórem. Měřený poloměr struktury OISF je srovnán se simukacemi v/G a se závislostí kritické hodnote v/G na koncentraci bóru v krystalu. Jako první identifikujeme pásovou strukturu OISF ringu a objasňujeme její příčinu v abnormální precipitaci kyslíku. (cs) We study the pattern of OISF on heavily boron doped Si wafers. The measured radii of the OISF pattern are compared with V/G simulations and the dependence of the critical V/G value on boron concentration is constructed. The value for undoped silicon is assumed to be close to 0.13 mm2/min K. The critical value rises steadily with boron concentration following a logarithmic dependency. The OISF ring located in the P band, commonly observed in lightly doped silicon, is not detected. We observe the banded OISF pattern, which reflects the residual vacancy profile according to the qualitative model for microdefects formation proposed by Voronkov and Falster. Such OISF distribution is not reported so far. As an explanation, abnormal oxygen precipitation during crystal growth due to heavy boron doping and high oxygen content is assumed. Furthermore, we observe fine structure of the L band and a strong dependence of the OISF pattern appearance on the oxygen content and the crystal thermal history. We study the pattern of OISF on heavily boron doped Si wafers. The measured radii of the OISF pattern are compared with V/G simulations and the dependence of the critical V/G value on boron concentration is constructed. The value for undoped silicon is assumed to be close to 0.13 mm2/min K. The critical value rises steadily with boron concentration following a logarithmic dependency. The OISF ring located in the P band, commonly observed in lightly doped silicon, is not detected. We observe the banded OISF pattern, which reflects the residual vacancy profile according to the qualitative model for microdefects formation proposed by Voronkov and Falster. Such OISF distribution is not reported so far. As an explanation, abnormal oxygen precipitation during crystal growth due to heavy boron doping and high oxygen content is assumed. Furthermore, we observe fine structure of the L band and a strong dependence of the OISF pattern appearance on the oxygen content and the crystal thermal history. (en)
Title	OISF Pattern and Grown-in Precipitates in Heavily Boron Doped Silicon OISF Pattern and Grown-in Precipitates in Heavily Boron Doped Silicon (en) Struktura OISF a růstových precipitátů v křemíku silně legovaném bórem (cs)
skos:prefLabel	OISF Pattern and Grown-in Precipitates in Heavily Boron Doped Silicon OISF Pattern and Grown-in Precipitates in Heavily Boron Doped Silicon (en) Struktura OISF a růstových precipitátů v křemíku silně legovaném bórem (cs)
skos:notation	RIV/26821532:_____/07:#0000004!RIV08-MPO-26821532
http://linked.open.../vavai/riv/strany	H904-H909
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(FI-IM2/131)
http://linked.open...iv/cisloPeriodika	10
http://linked.open...vai/riv/dodaniDat	2008
http://linked.open...aciTvurceVysledku	Válek, Lukáš Šik, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	ON SEMICONDUCTOR CZECH REPUBLIC, s.r.o.
http://linked.open...dnocenehoVysledku	439086
http://linked.open...ai/riv/idVysledku	RIV/26821532:_____/07:#0000004
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Silicon, OISF, precipitation, boron doped (en)
http://linked.open.../riv/klicoveSlovo	Silicon precipitation OISF boron doped
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[1677E8464628]
http://linked.open...i/riv/nazevZdroje	Journal of The Electrochemical Society
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	*Research and development of advanced silicon wafer for sub-micron technologies.
http://linked.open...UplatneniVysledku	2007
http://linked.open...v/svazekPeriodika	2007 (154)
http://linked.open...iv/tvurceVysledku	Válek, Lukáš Šik, Jan
issn	0013-4651
number of pages	6 (xsd:int)

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