About: Optimization of ion-atomic beam source for deposition of GaN ultrathin films

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About: Optimization of ion-atomic beam source for deposition of GaN ultrathin films Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electronimpact ion beam source to produce ultra-low energy (20–200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of 15 mm by one order of magnitude (j 1000 nA/cm2). Hence, a successful growth of GaN ultrathin films on Si(111) 7 x 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 C) than in conventional metalorganic chemical vapor deposition technologies (1000 C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative G We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electronimpact ion beam source to produce ultra-low energy (20–200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of 15 mm by one order of magnitude (j 1000 nA/cm2). Hence, a successful growth of GaN ultrathin films on Si(111) 7 x 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 C) than in conventional metalorganic chemical vapor deposition technologies (1000 C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative G (en)
Title	Optimization of ion-atomic beam source for deposition of GaN ultrathin films Optimization of ion-atomic beam source for deposition of GaN ultrathin films (en)
skos:prefLabel	Optimization of ion-atomic beam source for deposition of GaN ultrathin films Optimization of ion-atomic beam source for deposition of GaN ultrathin films (en)
skos:notation	RIV/00216305:26620/14:PU110024!RIV15-MSM-26620___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(ED1.1.00/02.0068), P(GPP108/12/P699), P(TE01020233)
http://linked.open...iv/cisloPeriodika	8
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Bartošík, Miroslav Kolíbal, Miroslav Šamořil, Tomáš Voborný, Stanislav Mach, Jindřich Šikola, Tomáš Zlámal, Jakub
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Středoevropský technologický institut
http://linked.open...dnocenehoVysledku	34959
http://linked.open...ai/riv/idVysledku	RIV/00216305:26620/14:PU110024
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Ion souce, Atomic source, GaN, Surfaces (en)
http://linked.open.../riv/klicoveSlovo	Surfaces GaN Atomic source Ion souce
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[BB325B6FD902]
http://linked.open...i/riv/nazevZdroje	Review of Scientific Instruments
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	7 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...vavai/riv/projekt	Advanced Microscopy and Spectroscopy Platform for Research and Development in Nano and Microtechnologies - AMISPEC Central european institute of technology Fabrication of semiconductor nanowires with optimized functional properties
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	85
http://linked.open...iv/tvurceVysledku	Kolíbal, Miroslav Mach, Jindřich Voborný, Stanislav Zlámal, Jakub Šamořil, Tomáš Šikola, Tomáš Bartošík, Miroslav
issn	0034-6748
number of pages	5 (xsd:int)
http://localhost/t...ganizacniJednotka	26620

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