About: Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis     Goto   Sponge   NotDistinct   Permalink

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  • Deposition and oxidation of metallic gallium droplets on Si(111) was studied by angle resolved X-ray photoelectron spectroscopy. Two gallium peaks - Ga 3d and Ga 2p - were simultaneously measured in order to get an advantage of different inelastic mean free paths of photoelectrons from these two energy levels differing in binding energy by 1100 eV. Together with the angular dependent data it enhances the precision of the size characterization of Ga droplets and oxide thickness determination. A model for the calculation of theoretical intensities based on an ellipsoidal shape of droplets is presented and a simple procedure for estimation of droplet height and actual surface coverage based on measurement on a single emission angle is suggested.
  • Deposition and oxidation of metallic gallium droplets on Si(111) was studied by angle resolved X-ray photoelectron spectroscopy. Two gallium peaks - Ga 3d and Ga 2p - were simultaneously measured in order to get an advantage of different inelastic mean free paths of photoelectrons from these two energy levels differing in binding energy by 1100 eV. Together with the angular dependent data it enhances the precision of the size characterization of Ga droplets and oxide thickness determination. A model for the calculation of theoretical intensities based on an ellipsoidal shape of droplets is presented and a simple procedure for estimation of droplet height and actual surface coverage based on measurement on a single emission angle is suggested. (en)
Title
  • Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis
  • Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis (en)
skos:prefLabel
  • Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis
  • Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis (en)
skos:notation
  • RIV/00216305:26210/09:PU77848!RIV10-MSM-26210___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(IAA1010413), P(KAN400100701), P(LC06040), Z(MSM0021630508)
http://linked.open...iv/cisloPeriodika
  • 6
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 306785
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26210/09:PU77848
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • X-ray photoelectron spectroscopy, XPS, Gallium, Ga, Gallium Oxide, Ga2O3, Surface structures, Models, Calculations (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [817DEECE46F3]
http://linked.open...i/riv/nazevZdroje
  • Thin Solid Films
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
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http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 517
http://linked.open...iv/tvurceVysledku
  • Kolíbal, Miroslav
  • Šikola, Tomáš
  • Matlocha, Tomáš
  • Čechal, Jan
  • Kalousek, Radek
  • Dub, Petr
  • Tomanec, Ondřej
  • Polčák, Josef
http://linked.open...n/vavai/riv/zamer
issn
  • 0040-6090
number of pages
http://localhost/t...ganizacniJednotka
  • 26210
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