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  • The influence of deposition and annealing temperature on the morphology of ultra-thin cobalt layers on the native SiO2 surfaces has been investigated using AFM and XPS. To provide well defined conditions, the SiO2 layer was cleaned by thermal annealing at 560 - 580 C which caused desorption of the carbonaceous compounds. The deposition of Co on the native SiO2 at room temperature leads to the formation of smooth uniform layers. Upon annealing of these layers at temperatures above 260 - 320 C Co islands are formed. The further annealing at temperatures higher than 500 C causes a desorption of Co atoms from the oxide surface. No diffusion of Co atoms through the native SiO2 layer during the annealing has been observed up to the detection limit of XPS. The deposition at elevated temperatures in the range of 360 - 430 C leads to the formation of separate cobalt islands randomly arranged on the surface.
  • The influence of deposition and annealing temperature on the morphology of ultra-thin cobalt layers on the native SiO2 surfaces has been investigated using AFM and XPS. To provide well defined conditions, the SiO2 layer was cleaned by thermal annealing at 560 - 580 C which caused desorption of the carbonaceous compounds. The deposition of Co on the native SiO2 at room temperature leads to the formation of smooth uniform layers. Upon annealing of these layers at temperatures above 260 - 320 C Co islands are formed. The further annealing at temperatures higher than 500 C causes a desorption of Co atoms from the oxide surface. No diffusion of Co atoms through the native SiO2 layer during the annealing has been observed up to the detection limit of XPS. The deposition at elevated temperatures in the range of 360 - 430 C leads to the formation of separate cobalt islands randomly arranged on the surface. (en)
Title
  • Morphology of cobalt layers on native SiO2 surfaces at elevated temperatures: formation of Co islands
  • Morphology of cobalt layers on native SiO2 surfaces at elevated temperatures: formation of Co islands (en)
skos:prefLabel
  • Morphology of cobalt layers on native SiO2 surfaces at elevated temperatures: formation of Co islands
  • Morphology of cobalt layers on native SiO2 surfaces at elevated temperatures: formation of Co islands (en)
skos:notation
  • RIV/00216305:26210/08:PU75111!RIV10-MSM-26210___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GEFON/06/E001), P(IAA1010413), P(KAN400100701), P(LC06040), Z(MSM0021630508)
http://linked.open...iv/cisloPeriodika
  • 15
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 380644
http://linked.open...ai/riv/idVysledku
  • RIV/00216305:26210/08:PU75111
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Cobalt, Co, Silicon dioxide, SiO2, Islands, XPS, Photoelectron spectroscopy, SPM, AFM, MFM. (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [EB18EBED1A34]
http://linked.open...i/riv/nazevZdroje
  • Surface Science
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 602
http://linked.open...iv/tvurceVysledku
  • Luksch, Jaroslav
  • Šikola, Tomáš
  • Urbánek, Michal
  • Čechal, Jan
  • Brandejsová, Eva
  • Koňáková, Kateřina
http://linked.open...n/vavai/riv/zamer
issn
  • 0039-6028
number of pages
http://localhost/t...ganizacniJednotka
  • 26210
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