About: In-situ doping and implantation of GaN layers with Mn

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	In this paper we present a growth of Ga(1-x)Mn(x)N layers by Metal-Organic Vapor Phase Epitaxy(MOVPE) and ion implantation of GaN layers with Mn. This material is a promising candidate for spintronic applications. The layers were prepared on (0001) sapphire substrates. Optimum parameters of preparations by MOVPE method were investigated and the prepared samples were tested for magnetic properties. The samples were characterized by Secondary Ion Mass Spectrometry(SIMS), Electron Microprobe and Particle Induce X-ray Emission (PIXE) methods, and by Raman spectroscopy. The magnetic parameters were investigated using the Superconducting Quantum Interference Device(SQUID) In this paper we present a growth of Ga(1-x)Mn(x)N layers by Metal-Organic Vapor Phase Epitaxy(MOVPE) and ion implantation of GaN layers with Mn. This material is a promising candidate for spintronic applications. The layers were prepared on (0001) sapphire substrates. Optimum parameters of preparations by MOVPE method were investigated and the prepared samples were tested for magnetic properties. The samples were characterized by Secondary Ion Mass Spectrometry(SIMS), Electron Microprobe and Particle Induce X-ray Emission (PIXE) methods, and by Raman spectroscopy. The magnetic parameters were investigated using the Superconducting Quantum Interference Device(SQUID) (en)
Title	In-situ doping and implantation of GaN layers with Mn In-situ doping and implantation of GaN layers with Mn (en)
skos:prefLabel	In-situ doping and implantation of GaN layers with Mn In-situ doping and implantation of GaN layers with Mn (en)
skos:notation	RIV/00216208:11320/09:10084015!RIV11-MSM-11320___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA104/06/0642), Z(MSM0021620834), Z(MSM6046137302)
http://linked.open...iv/cisloPeriodika	S2
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Václavů, Michal
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Univerzita Karlova v Praze / Matematicko-fyzikální fakulta
http://linked.open...dnocenehoVysledku	319715
http://linked.open...ai/riv/idVysledku	RIV/00216208:11320/09:10084015
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Vapor phase epitaxy; Magnetic semiconductors; Doping thin films; Doping III-V and II-VI semiconductors (en)
http://linked.open.../riv/klicoveSlovo	Magnetic semiconductors Doping III-V and II-VI semiconductors Doping thin films Vapor phase epitaxy
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[EED62BC0149F]
http://linked.open...i/riv/nazevZdroje	Physica Status Solidi. C. Solid State Physics
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	10 (xsd:int)
http://linked.open...vavai/riv/projekt	Thin Films of Magnetically Doped A(iii)N Semiconductors for Spin Electronics Applications
http://linked.open...UplatneniVysledku	2009
http://linked.open...v/svazekPeriodika	6
http://linked.open...iv/tvurceVysledku	Jurek, K. Stejskal, J. Sedmidubský, D. Hardtdegen, H. Hejtmánek, J. Václavů, Michal Havránek, V. Šofer, Z. Macková, A. Maryko, M.
http://linked.open...n/vavai/riv/zamer	Condensed Matter Physics – New Materials and Technologies Preparation and research of functional materials and material technologies using micro- and nanoscopic methods
issn	1862-6351
number of pages	4 (xsd:int)
http://localhost/t...ganizacniJednotka	11320
is http://linked.open...avai/riv/vysledek of	In-situ doping and implantation of GaN layers with Mn In-situ doping and implantation of GaN layers with Mn In-situ doping and implantation of GaN layers with Mn

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