About: Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The pumping intensity (I) dependence of the photoluminescence (PL) spectra of laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum dots and electrons localized in the surrounding Si matrix. The analysis of the spectra revealed several distinct bands, attributed to phonon-assisted recombination and no-phonon recombination of the excitonic ground state and of the excited excitonic states, which all exhibit a linear I dependence of the PL intensity. At I>3 W.cm2, additional bands with a quadratic I dependence appear in the PL spectra, resulting from biexcitonic transitions. These emerging PL contributions shift the composite no-phonon PL band of the SiGe quantum dots to higher energies. The observed transition energies are in good agreement with the exciton and biexciton energies calculated using the envelope function approximation and the configuration interaction method. The pumping intensity (I) dependence of the photoluminescence (PL) spectra of laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum dots and electrons localized in the surrounding Si matrix. The analysis of the spectra revealed several distinct bands, attributed to phonon-assisted recombination and no-phonon recombination of the excitonic ground state and of the excited excitonic states, which all exhibit a linear I dependence of the PL intensity. At I>3 W.cm2, additional bands with a quadratic I dependence appear in the PL spectra, resulting from biexcitonic transitions. These emerging PL contributions shift the composite no-phonon PL band of the SiGe quantum dots to higher energies. The observed transition energies are in good agreement with the exciton and biexciton energies calculated using the envelope function approximation and the configuration interaction method. (en)
Title	Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition (en)
skos:prefLabel	Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition (en)
skos:notation	RIV/68378271:_____/12:00384869!RIV13-AV0-68378271
http://linked.open...avai/predkladatel	Fyzikální ústav AV ČR, v.v.i.
http://linked.open...avai/riv/aktivita	P S Z
http://linked.open...avai/riv/aktivity	P(ED1.1.00/02.0068), S, Z(AV0Z10100521)
http://linked.open...iv/cisloPeriodika	11
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Křápek, Vlastimil
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	135422
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/12:00384869
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	semiconductors nanocrystals; cyclotron resonance; uniaxial-stress; band alignment; Ge islands; germanium; wells; silicon; Si(001); luminescence (en)
http://linked.open.../riv/klicoveSlovo	germanium cyclotron resonance luminescence silicon Ge islands Si(001) band alignment semiconductors nanocrystals uniaxial-stress wells
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[6C792EE8F2E4]
http://linked.open...i/riv/nazevZdroje	Physical Review. B
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	10 (xsd:int)
http://linked.open...vavai/riv/projekt	Central european institute of technology
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	86
http://linked.open...iv/tvurceVysledku	Křápek, Vlastimil Bauer, G. Humlíček, J. Brehm, M. Fromherz, T. Hackl, F. Klenovský, P. Lausecker, E. Munzar, D. Steiner, H.
http://linked.open...ain/vavai/riv/wos	000308288300008
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films
issn	1098-0121
number of pages	8 (xsd:int)
http://bibframe.org/vocab/doi	10.1103/PhysRevB.86.115305
is http://linked.open...avai/riv/vysledek of	Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

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