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rdf:type
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Description
| - CNx films were deposited on Si(100) substrates at a substrate temperature using DC magnetron sputtering of a high-purity graphite target in pure nitrogen. The film characteristics were primarily controlled by the pressure,p, (0.05 to 5 Pa), the discharge current on the magnetron target, Im, (0.5 to 3 A), and the RF-induced negative substrate bias voltage, Ub, (-300 to -1200 V). A complex relationship between the process parameters and the film characteristics was investigated on the basis of correlations between the process parameters and the respective internal plasma parameters, such as ion bombardment characteristics and the densities of N atoms and CN radicals in front of the substrate.
- CNx films were deposited on Si(100) substrates at a substrate temperature using DC magnetron sputtering of a high-purity graphite target in pure nitrogen. The film characteristics were primarily controlled by the pressure,p, (0.05 to 5 Pa), the discharge current on the magnetron target, Im, (0.5 to 3 A), and the RF-induced negative substrate bias voltage, Ub, (-300 to -1200 V). A complex relationship between the process parameters and the film characteristics was investigated on the basis of correlations between the process parameters and the respective internal plasma parameters, such as ion bombardment characteristics and the densities of N atoms and CN radicals in front of the substrate. (en)
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Title
| - Characterization of ion bombardment and optical emission spectroscopy in magnetron discharges for reactive sputtering of hard carbon nitride films
- Characterization of ion bombardment and optical emission spectroscopy in magnetron discharges for reactive sputtering of hard carbon nitride films (en)
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skos:prefLabel
| - Characterization of ion bombardment and optical emission spectroscopy in magnetron discharges for reactive sputtering of hard carbon nitride films
- Characterization of ion bombardment and optical emission spectroscopy in magnetron discharges for reactive sputtering of hard carbon nitride films (en)
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skos:notation
| - RIV/49777513:23520/00:00052714!RIV/2001/MSM/235201/N
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GV106/96/K245), P(VS96059), Z(MSM 235200002)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
| - Vlček, Jaroslav
- Rusňák, Karel
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/49777513:23520/00:00052714
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http://linked.open...riv/jazykVysledku
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http://linked.open...odStatuVydavatele
| - FR - Francouzská republika
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Vlček, Jaroslav
- Rusňák, Karel
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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