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  • The deposition of Ge(25)Sb(10)S(65) and Ge(25)Sb(10)Se(65) amorphous chalcogenide thin films was performed by radio-frequency magnetron sputtering and pulsed laser deposition technique. The deposited layers were characterized by studying their morphology, topography, chemical composition, structure, and optical functions permitting a direct comparison of two deposition methods for obtaining attractive amorphous chalcogenide films. Reactive ion etching was then used to pattern rib/ridge waveguides in sulfide and selenide films with low surface roughness, vertical sidewalls, and reasonable etching rate. Optical losses of fabricated waveguides were measured at 1550 nm with values better than 1 dB/cm obtained for sulfide/selenide films deposited by both techniques.
  • The deposition of Ge(25)Sb(10)S(65) and Ge(25)Sb(10)Se(65) amorphous chalcogenide thin films was performed by radio-frequency magnetron sputtering and pulsed laser deposition technique. The deposited layers were characterized by studying their morphology, topography, chemical composition, structure, and optical functions permitting a direct comparison of two deposition methods for obtaining attractive amorphous chalcogenide films. Reactive ion etching was then used to pattern rib/ridge waveguides in sulfide and selenide films with low surface roughness, vertical sidewalls, and reasonable etching rate. Optical losses of fabricated waveguides were measured at 1550 nm with values better than 1 dB/cm obtained for sulfide/selenide films deposited by both techniques. (en)
Title
  • Sputtering and pulsed laser deposition for near and mid-infrared applications: A comparative study of Ge25Sb10S65 and Ge25Sb10Se65 amorphous thin films.
  • Sputtering and pulsed laser deposition for near and mid-infrared applications: A comparative study of Ge25Sb10S65 and Ge25Sb10Se65 amorphous thin films. (en)
skos:prefLabel
  • Sputtering and pulsed laser deposition for near and mid-infrared applications: A comparative study of Ge25Sb10S65 and Ge25Sb10Se65 amorphous thin films.
  • Sputtering and pulsed laser deposition for near and mid-infrared applications: A comparative study of Ge25Sb10S65 and Ge25Sb10Se65 amorphous thin films. (en)
skos:notation
  • RIV/00216275:25310/11:39892140!RIV12-GA0-25310___
http://linked.open...avai/predkladatel
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  • P(GA104/08/0229), Z(MSM0021627501)
http://linked.open...iv/cisloPeriodika
  • 5
http://linked.open...vai/riv/dodaniDat
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  • 231698
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  • RIV/00216275:25310/11:39892140
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  • thin films; amorphous chalcogenides; pulsed laser deposition; sputtering (en)
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  • GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV
  • [26ADB22B5484]
http://linked.open...i/riv/nazevZdroje
  • International Journal of Applied Ceramic Technology
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  • 8
http://linked.open...iv/tvurceVysledku
  • Němec, Petr
  • Nazabal, Virginie
  • Adam, J.-L.
  • Brandily-Anne, M.-L.
  • Charpentier, F.
  • Charrier, J.
  • Guin, J.-P.
  • Lhermite, H.
  • Moréac, A.
http://linked.open...ain/vavai/riv/wos
  • 000297249200002
http://linked.open...n/vavai/riv/zamer
issn
  • 1546-542X
number of pages
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  • 10.1111/j.1744-7402.2010.02571.x
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  • 25310
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