About: Force mapping on a partially H-covered Si(111)-(7x7) surface: Influence of tip and surface reactivity     Goto   Sponge   NotDistinct   Permalink

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  • On the basis of noncontact atomic force microscopy (NC-AFM) on the Si(111)-7x7 surface, supported by density functional theory (DFT) simulations, we identify two types of NC-AFM tip termination, resulting in two characteristic modes of interaction (weaker or stronger) between the tip and the surface. We explain the existence of these two interaction modes in terms of the tip structure and interaction mechanism.
  • On the basis of noncontact atomic force microscopy (NC-AFM) on the Si(111)-7x7 surface, supported by density functional theory (DFT) simulations, we identify two types of NC-AFM tip termination, resulting in two characteristic modes of interaction (weaker or stronger) between the tip and the surface. We explain the existence of these two interaction modes in terms of the tip structure and interaction mechanism. (en)
Title
  • Force mapping on a partially H-covered Si(111)-(7x7) surface: Influence of tip and surface reactivity
  • Force mapping on a partially H-covered Si(111)-(7x7) surface: Influence of tip and surface reactivity (en)
skos:prefLabel
  • Force mapping on a partially H-covered Si(111)-(7x7) surface: Influence of tip and surface reactivity
  • Force mapping on a partially H-covered Si(111)-(7x7) surface: Influence of tip and surface reactivity (en)
skos:notation
  • RIV/68378271:_____/13:00399920!RIV14-GA0-68378271
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  • I, P(GAP204/10/0952), P(GPP204/11/P578), P(IAA100100905)
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  • 15
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  • 75423
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  • RIV/68378271:_____/13:00399920
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  • atomic force microscopy; DFT simulations; silicon surface; surface passivation; electrostatic interaction (en)
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  • US - Spojené státy americké
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  • [2CD487746386]
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  • Physical Review. B
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  • 87
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  • Jelínek, Pavel
  • Tanaka, H.
  • Ondráček, Martin
  • Pou, P.
  • Pérez, R.
  • Abe, M.
  • Morita, S.
  • Sugimoto, Y.
  • Yurtsever, A.
http://linked.open...ain/vavai/riv/wos
  • 000317194800006
issn
  • 1098-0121
number of pages
http://bibframe.org/vocab/doi
  • 10.1103/PhysRevB.87.155403
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