About: High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Optical pump—terahertz probe spectroscopy was used for investigation of electron dynamics in In0.53Ga0.47As films irradiated by heavy ions (Br+) at doses from 10^9 to 10^12 cm^-2. From the transient conductivity spectra, photoexcited electron lifetimes and mobilities were determined; their decrease is observed upon increase of the irradiation dose. At the highest dose, the material combines an electron lifetime of 0.46 ps with an exceptionally high photoexcited electron mobility of 3600 cm2V–1s–1. This last value is even higher than those reported for low-temperature-grown GaAs with similar electron lifetime. Due to its rather low band gap heavy-ion irradiated IIn0.53Ga0.47As shows promising properties for the development of THz systems using telecommunication based technology. Optical pump—terahertz probe spectroscopy was used for investigation of electron dynamics in In0.53Ga0.47As films irradiated by heavy ions (Br+) at doses from 10^9 to 10^12 cm^-2. From the transient conductivity spectra, photoexcited electron lifetimes and mobilities were determined; their decrease is observed upon increase of the irradiation dose. At the highest dose, the material combines an electron lifetime of 0.46 ps with an exceptionally high photoexcited electron mobility of 3600 cm2V–1s–1. This last value is even higher than those reported for low-temperature-grown GaAs with similar electron lifetime. Due to its rather low band gap heavy-ion irradiated IIn0.53Ga0.47As shows promising properties for the development of THz systems using telecommunication based technology. (en)
Title	High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As (en)
skos:prefLabel	High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As (en)
skos:notation	RIV/68378271:_____/09:00330267!RIV10-AV0-68378271
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GP202/09/P099), P(IAA100100902), Z(AV0Z10100520)
http://linked.open...iv/cisloPeriodika	19
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Kužel, Petr Němec, Hynek Kadlec, Filip Fekete, Ladislav
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Fyzikální ústav AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	317105
http://linked.open...ai/riv/idVysledku	RIV/68378271:_____/09:00330267
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	InGaAs; photocarrier mobility; ultrafast photoconductivity terahertz; ion irradiation; terahertz; ion irradiation (en)
http://linked.open.../riv/klicoveSlovo	terahertz InGaAs ion irradiation photocarrier mobility ultrafast photoconductivity terahertz
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[93A5740FFFD8]
http://linked.open...i/riv/nazevZdroje	Journal of Physics D-Applied Physics
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...vavai/riv/projekt	Ultrafast electron dynamics in disordered organic and inorganic semiconductors studied by time-resolved terahertz spectroscopy Study of ultrafast photoconductivity and charge transport in thin semiconducting layers using terahertz spectroscopy
http://linked.open...UplatneniVysledku	2009
http://linked.open...v/svazekPeriodika	42
http://linked.open...iv/tvurceVysledku	Kužel, Petr Martin, M. Němec, Hynek Delagnes, J. C. Fekete, Ladislav Kadlec, Filip Mounaix, P. Mangeney, J.
http://linked.open...ain/vavai/riv/wos	000269993100029
http://linked.open...n/vavai/riv/zamer	Specific effects in condensed systems with reduced dimension and broken symmetry
issn	0022-3727
number of pages	6 (xsd:int)
is http://linked.open...avai/riv/vysledek of	High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As

Faceted Search & Find service v1.16.118 as of Jun 21 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3240 as of Jun 21 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 117 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software