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Description
| - Thermal stability of deposited Si-B-C-N materials (film fragments or powders without a substrate) in inert gases (He and Ar) up to 1700 °C was investigated using differential scanning calorimetry, high-resolution thermogravimetry and X-ray diffraction measurements. Amorphous Si-B-C-N films were fabricated by dc magnetron co-sputtering of a single B4C-Si target in two nitrogen-argon gas mixtures (50% N2 + 50% Ar or 25% N2 + 75% Ar). It was found that the deposited Si-B-C-N materials can be more stable at high temperatures in the inert atmosphere than the usually used substrates (e.g. SiC or BN). The materials with the compositions (in at.%) Si32-33B10C2N50-51, for which N/(Si+B+C)=1.1-1.2, retained their amorphous structure up to 1600 °C without any structural transformations and detectable mass changes.
- Thermal stability of deposited Si-B-C-N materials (film fragments or powders without a substrate) in inert gases (He and Ar) up to 1700 °C was investigated using differential scanning calorimetry, high-resolution thermogravimetry and X-ray diffraction measurements. Amorphous Si-B-C-N films were fabricated by dc magnetron co-sputtering of a single B4C-Si target in two nitrogen-argon gas mixtures (50% N2 + 50% Ar or 25% N2 + 75% Ar). It was found that the deposited Si-B-C-N materials can be more stable at high temperatures in the inert atmosphere than the usually used substrates (e.g. SiC or BN). The materials with the compositions (in at.%) Si32-33B10C2N50-51, for which N/(Si+B+C)=1.1-1.2, retained their amorphous structure up to 1600 °C without any structural transformations and detectable mass changes. (en)
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Title
| - Thermal stability of magnetron sputtered Si-B-C-N materials at temperatures up to 1700 °C
- Thermal stability of magnetron sputtered Si-B-C-N materials at temperatures up to 1700 °C (en)
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skos:prefLabel
| - Thermal stability of magnetron sputtered Si-B-C-N materials at temperatures up to 1700 °C
- Thermal stability of magnetron sputtered Si-B-C-N materials at temperatures up to 1700 °C (en)
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skos:notation
| - RIV/49777513:23520/10:00503542!RIV11-MSM-23520___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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| - RIV/49777513:23520/10:00503542
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http://linked.open.../riv/klicovaSlova
| - Si-B-C-N films; thin films; thermal stability; differential scanning calorimetry; thermogravimetry; X-ray diffraction; reactive sputtering (en)
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http://linked.open...iv/tvurceVysledku
| - Zeman, Petr
- Vlček, Jaroslav
- Čerstvý, Radomír
- Čapek, Jiří
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