About: Noise of Ta2O5 and Nb2O5 thin insulating films in the temperature range 10 K to 400 K

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We have performed investigation of noise and transport mechanisms in insulating films of Ta2O5 and Nb2O5 from the point of view of their application as dielectric layers in capacitors, MOS devices, etc. These dielectric films show high relative permittivity, low leakage current density of the order of nA/cm2 in the electric field 1MV/cm, and high breakdown field of the order of 3-4 MV/cm. Analysis of I-V characteristics performed as a function of temperature allows the identification of dominant conduction mechanisms and corresponding noise sources. Ta2O5 films of the thickness about 28 nm and Nb2O5 thin films of the thickness about 150 nm were investigated. Tunneling current mechanism is dominant for the temperatures below 200 K. In this temperature range current noise spectral density is 1/f type. Poole-Frenkel and Schottky current transport mechanism is dominant for temperatures higher than 350 K. 1/f noise is pronounced in the frequency range bellow 20 Hz, while in the range 20 to 100 Hz GR noise We have performed investigation of noise and transport mechanisms in insulating films of Ta2O5 and Nb2O5 from the point of view of their application as dielectric layers in capacitors, MOS devices, etc. These dielectric films show high relative permittivity, low leakage current density of the order of nA/cm2 in the electric field 1MV/cm, and high breakdown field of the order of 3-4 MV/cm. Analysis of I-V characteristics performed as a function of temperature allows the identification of dominant conduction mechanisms and corresponding noise sources. Ta2O5 films of the thickness about 28 nm and Nb2O5 thin films of the thickness about 150 nm were investigated. Tunneling current mechanism is dominant for the temperatures below 200 K. In this temperature range current noise spectral density is 1/f type. Poole-Frenkel and Schottky current transport mechanism is dominant for temperatures higher than 350 K. 1/f noise is pronounced in the frequency range bellow 20 Hz, while in the range 20 to 100 Hz GR noise (en)
Title	Noise of Ta2O5 and Nb2O5 thin insulating films in the temperature range 10 K to 400 K Noise of Ta2O5 and Nb2O5 thin insulating films in the temperature range 10 K to 400 K (en)
skos:prefLabel	Noise of Ta2O5 and Nb2O5 thin insulating films in the temperature range 10 K to 400 K Noise of Ta2O5 and Nb2O5 thin insulating films in the temperature range 10 K to 400 K (en)
skos:notation	RIV/00216305:26220/11:PU96227!RIV12-MSM-26220___
http://linked.open...avai/predkladatel	Fakulta elektrotechniky a komunikačních technologií
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Sedláková, Vlasta Kopecký, Martin Chvátal, Miloš
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	216148
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/11:PU96227
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	1/f noise, G-R noise, Tunnelling, Poole-Frenkel current, Thin oxide films (en)
http://linked.open.../riv/klicoveSlovo	1/f noise G-R noise Poole-Frenkel current Thin oxide films Tunnelling
http://linked.open...ontrolniKodProRIV	[0B7F5F85B6BD]
http://linked.open...v/mistoKonaniAkce	Toronto, Kanada
http://linked.open...i/riv/mistoVydani	Kanada
http://linked.open...i/riv/nazevZdroje	Proceedings of ICNF 2011
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Stochastic Phenomena in MIS and MIM Semiconductor Structures Diagnostics of material defects using the latest defectoscopic methods
http://linked.open...UplatneniVysledku	2011
http://linked.open...iv/tvurceVysledku	Kopecký, Martin Sedláková, Vlasta Šikula, Josef Chvátal, Miloš
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2011-06-12 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Nové trendy v mikroelektronických systémech a nanotechnologiích (MIKROSYN)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	IEEE
https://schema.org/isbn	978-1-4577-0191-7
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	Noise of Ta2O5 and Nb2O5 thin insulating films in the temperature range 10 K to 400 K Noise of Ta2O5 and Nb2O5 thin insulating films in the temperature range 10 K to 400 K

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