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Description
| - The paper presents the experimental analysis of low frequency noise and charge carrier transport mechanisms in Nb2O5 thin films. The ohmic conduction is dominant for the low electric field. Poole-Frenkel and Schottky mechanism become dominant for electric fields up to 125MV/m. Tunneling current becomes dominant for electric field higher than 125-175 MV/m. This value depend on the temperature. It was proved experimentally at the room temperature that GR noise is dominant for the low electric field (Poole-Frenkel current and Schottky current), while for the high electric field, where the tunneling current is dominant, the low frequency noise is 1/f type. We have arranged the measuring set-up which allows the CV and IV characteristics and low frequency noise measurements in the temperature range 10 to 400 K. The voltage noise spectral density is 1/f type as we expect for high electric field on the sample. The leakage current is exhibiting the tunneling current component only in the temperature range bell
- The paper presents the experimental analysis of low frequency noise and charge carrier transport mechanisms in Nb2O5 thin films. The ohmic conduction is dominant for the low electric field. Poole-Frenkel and Schottky mechanism become dominant for electric fields up to 125MV/m. Tunneling current becomes dominant for electric field higher than 125-175 MV/m. This value depend on the temperature. It was proved experimentally at the room temperature that GR noise is dominant for the low electric field (Poole-Frenkel current and Schottky current), while for the high electric field, where the tunneling current is dominant, the low frequency noise is 1/f type. We have arranged the measuring set-up which allows the CV and IV characteristics and low frequency noise measurements in the temperature range 10 to 400 K. The voltage noise spectral density is 1/f type as we expect for high electric field on the sample. The leakage current is exhibiting the tunneling current component only in the temperature range bell (en)
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Title
| - NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE
- NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE (en)
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skos:prefLabel
| - NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE
- NOISE AND ELECTRON TRANSPORT MECHANISMS IN Nb2O5 THIN FILMS IN WIDE TEMPERATURE RANGE (en)
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skos:notation
| - RIV/00216305:26220/11:PU93447!RIV12-MSM-26220___
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http://linked.open...avai/predkladatel
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA102/09/1920), P(GD102/09/H074), Z(MSM0021630503)
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216305:26220/11:PU93447
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Noise, Electron Transport, Nb2O5 (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
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http://linked.open...i/riv/mistoVydani
| - Nám. Republiky 614 00 Brno
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http://linked.open...i/riv/nazevZdroje
| - Proc. IMAPS CS Int. Conf. Electronic Devices and Systems EDS 2011
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Kopecký, Martin
- Sedláková, Vlasta
- Trčka, Tomáš
- Chvátal, Miloš
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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http://linked.open...n/vavai/riv/zamer
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number of pages
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http://purl.org/ne...btex#hasPublisher
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https://schema.org/isbn
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http://localhost/t...ganizacniJednotka
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is http://linked.open...avai/riv/vysledek
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