"BGSOI WAFER FOR ULTRA FS IGBT" . . "Jednotkov\u00E1 cena 80 USD/deska. P\u010Dek\u00E1van\u00FD objem v\u00FDroby min. 5000 desek/rok." . "V\u00E1lek, Luk\u00E1\u0161" . "Lorenc, Michal" . "[9BD36BD2DF56]" . "Wafer diameter: 150+/-0.2 mm, wafer thickness: 625 +/-10 um, WARP max. 50 um, BOW max. 40 um, TTV max. 4 um, SOI layer thickness 105 +/- 1 um, BOX 130 - 140 nm. V\u00FDsledek bude vyu\u017Eit p\u0159\u00EDjemcem - ON SEMICONDUCTOR (I\u010C26821532) ve v\u00FDrobn\u00ED lince CZ2. Licen\u010Dn\u00ED smlouva nebyla uzav\u0159ena. Odpov\u011Bdnost: M. Lorenc, +420571754507, michal.lorenc@onsemi.com." . . "BGSOI WAFER FOR ULTRA FS IGBT" . . . . . "P(TA01010078)" . "3"^^ . . "W760S00" . . . . "3"^^ . "63287" . . "BGSOI (BOND and GRIND back SILICON-ON-INSULATOR) wafer for Ultra FS IGBT technology. Polished BGSOI wafer with diameter of 150 mm consists from thick device layer (> 100 um), thin BOX (BURIED OXIDE) layer (<200 nm) and silicon substrate." . . . . "SOI, BGSOI, Silicon-On-Insulator, BOX, buried oxide, semiconductor, silicon, bonding, wafer"@en . . . . . . . "RIV/26821532:_____/13:#0000069!RIV14-TA0-26821532" . "BGSOI WAFER FOR ULTRA FS IGBT"@en . . . "RIV/26821532:_____/13:#0000069" . . . . "Posp\u00ED\u0161il, Milo\u0161" . "BGSOI (BOND and GRIND back SILICON-ON-INSULATOR) wafer for Ultra FS IGBT technology. Polished BGSOI wafer with diameter of 150 mm consists from thick device layer (> 100 um), thin BOX (BURIED OXIDE) layer (<200 nm) and silicon substrate."@en . . "BGSOI WAFER FOR ULTRA FS IGBT"@en . . .