"Pokro\u010Dil\u00E1 BESOI technologie - Bond and Etch Back Silicon-On-Insulator \u2013 je zalo\u017Eena na v\u00FDrobn\u00EDm flow zahrnuj\u00EDc\u00EDm: 1) V\u00FDrobu le\u0161t\u011Bn\u00FDch k\u0159em\u00EDkov\u00FDch desek pro SOI, 2) Oxidaci desek pro BOX (Buried Oxide), 3) R\u016Fst specifick\u00E9 epitaxn\u00ED struktury s \u201Eetch-stop\u201C efektem, 4) Vhodnou \u00FAprava povrchu epitaxn\u00ED desky, bonding k\u0159em\u00EDkov\u00FDch desek a n\u00EDzkoteplotn\u00ED \u017E\u00EDh\u00E1n\u00ED bondovan\u00E9ho p\u00E1ru, 5) Brou\u0161en\u00ED aktivn\u00ED vrstvy a brou\u0161en\u00ED okraje SOI desky, 6) Brou\u0161en\u00ED a le\u0161t\u011Bn\u00ED SOI desky, 7) Selektivn\u00ED lept\u00E1n\u00ED na etch-stop, odstran\u011Bn\u00ED etch-stop, 8) Chemicko-mechanick\u00E1 planarizace (CMP) aktivn\u00ED oblasti BESOI, 9) \u010Ci\u0161t\u011Bn\u00ED SOI desek a m\u011B\u0159en\u00ED parametr\u016F SOI desek. Technologie umo\u017E\u0148uje v\u00FDrobu le\u0161t\u011Bn\u00FDch SOI desek v pr\u016Fm\u011Brech 150 a 200 mm, s tlou\u0161\u0165kou BOX 100 \u2013 2000 nm, s tlou\u0161\u0165kou aktivn\u00ED oblasti > 1 um s n\u00EDzkou variabilitou tlou\u0161\u0165ky a\u017E +/- 0.1 um." . . "5"^^ . . . . "Advanced BESOI Technology"@en . . . "\u0160ik, Jan" . . "RIV/26821532:_____/13:#0000067!RIV14-TA0-26821532" . "5"^^ . . "Kosteln\u00EDk, Petr" . "BESOI-CZ2-ZKZ13/103" . "Pokro\u010Dil\u00E1 BESOI technologie" . . . . "Silicon, Silicon-On-Insulator, SOI, BESOI, Polishing, Grinding, Etching, Epitaxy, Etch-stop, Semiconductor"@en . "[27E6A07E2416]" . "P(TA01010078)" . "V\u00E1lek, Luk\u00E1\u0161" . "JEDNOTKOV\u00C1 CENA 100 USD/STANDARDN\u00CD BGSOI DESKA (PR\u016EM\u011AR 150 mm), o\u010Dek\u00E1van\u00FD ro\u010Dn\u00ED objem v\u00FDroby min. 1 tis. desek." . . "RIV/26821532:_____/13:#0000067" . "Lorenc, Michal" . "Pokro\u010Dil\u00E1 BESOI technologie"@cs . . . . . "Posp\u00ED\u0161il, Milo\u0161" . . . . . "Pokro\u010Dil\u00E1 BESOI technologie" . . . . . "Advanced BESOI Technology"@en . . "96882" . "Pokro\u010Dil\u00E1 BESOI technologie"@cs . . . . . . "DEVICE LAYER > 1 um, RADI\u00C1LN\u00CD VARIABILITA +/-0.1um, BOX 100-2000 nm, WAFER DIAMETER 150 a 200 mm, SPECIFIKACE EPITAXN\u00CD DESKY PRO POLOVODODI\u010COV\u00C9 APLIKACE. V\u00FDsledek bude vyu\u017Eit p\u0159\u00EDjemcem - ON SEMICONDUCTOR (I\u010C26821532) ve v\u00FDrobn\u00ED lince CZ2. Licen\u010Dn\u00ED smlouva nebyla uzav\u0159ena. Odpov\u011Bdnost: M. Lorenc, +420571754507, michal.lorenc@onsemi.com." . "Advanced BESOI Technology - Bond and Etch Back Silicon-On-Insulator \u2013 is based on manufacturing flow including: 1) Manufacturing of polished silicon wafers for SOI, 2) Thermal oxidation of wafers for BOX (Buried Oxide), 3) Epitaxial growth of specific layers with \u201Cetch-stop\u201D effect, 4) Proper surface treatment of epitaxial wafer, wafers bonding and bonded pairs low-temperature annealing, 5) Device layer grinding and grinding of the edge of SOI wafer. 6) Grinding and polishing of SOI wafer, 7) Selective etching to etch-stop layer, removal of etch-stop layer, 8) Chemical-mechanical planarization (CMP) of BESOI device layer, 9) Cleaning of SOI wafers and SOI wafers metrology. This technology produces polished SOI wafers with diameters of 150 and 200 mm, with BOX thickness of 100 \u2013 2000 nm and device layer thickness > 1 um with low radial thickness variability +/- 0.1 um."@en . "Pokro\u010Dil\u00E1 BESOI technologie - Bond and Etch Back Silicon-On-Insulator \u2013 je zalo\u017Eena na v\u00FDrobn\u00EDm flow zahrnuj\u00EDc\u00EDm: 1) V\u00FDrobu le\u0161t\u011Bn\u00FDch k\u0159em\u00EDkov\u00FDch desek pro SOI, 2) Oxidaci desek pro BOX (Buried Oxide), 3) R\u016Fst specifick\u00E9 epitaxn\u00ED struktury s \u201Eetch-stop\u201C efektem, 4) Vhodnou \u00FAprava povrchu epitaxn\u00ED desky, bonding k\u0159em\u00EDkov\u00FDch desek a n\u00EDzkoteplotn\u00ED \u017E\u00EDh\u00E1n\u00ED bondovan\u00E9ho p\u00E1ru, 5) Brou\u0161en\u00ED aktivn\u00ED vrstvy a brou\u0161en\u00ED okraje SOI desky, 6) Brou\u0161en\u00ED a le\u0161t\u011Bn\u00ED SOI desky, 7) Selektivn\u00ED lept\u00E1n\u00ED na etch-stop, odstran\u011Bn\u00ED etch-stop, 8) Chemicko-mechanick\u00E1 planarizace (CMP) aktivn\u00ED oblasti BESOI, 9) \u010Ci\u0161t\u011Bn\u00ED SOI desek a m\u011B\u0159en\u00ED parametr\u016F SOI desek. Technologie umo\u017E\u0148uje v\u00FDrobu le\u0161t\u011Bn\u00FDch SOI desek v pr\u016Fm\u011Brech 150 a 200 mm, s tlou\u0161\u0165kou BOX 100 \u2013 2000 nm, s tlou\u0161\u0165kou aktivn\u00ED oblasti > 1 um s n\u00EDzkou variabilitou tlou\u0161\u0165ky a\u017E +/- 0.1 um."@cs . .