. . "RIV/26821532:_____/12:#0000036" . . . "Posp\u00ED\u0161il, Milo\u0161" . . . "Diameter 150 mm, substrate CZSi:B 3-13 ohmcm, (100), THK 625 or 525 um, BOX 620 nm, defect-free DL THK 3 +/- 0.3 um." . "Wafer costs < 60 USD." . . . . . "RIV/26821532:_____/12:#0000036!RIV13-TA0-26821532" . "DEMO SAMPLE (PROTOTYPE ) \u2013 V001/TA01010078 - W750S01/S00 SOI Wafers / 3 \u00B5m"@en . . "Lorenc, Michal" . . "\u0160ik, Jan" . "DEMO SAMPLE (PROTOTYPE ) \u2013 V001/TA01010078 - W750S01/S00 SOI Wafers / 3 \u00B5m" . "SOI; Silicon-On-Insulator; BGSOI; Polished wafer"@en . "Prototype (sample) of Bond and Grind Back Silicon-On-Insulator (BGSOI) wafer. BGSOI wafer diameter 150 mm, CZSi substrate sligthly doped by Boron (3-13 ohmcm), thickness 625 or 525 um, BOX (buried oxide layer) 620 nm, defect-free device layer thickness 3 +/- 0.3 um. Crystallographic orientation (100). Bonded interface: BOX/device layer. Back side surface: thermal oxide > 200 nm." . . . . "V001/TA01010078-W750S01/S00" . . . "DEMO SAMPLE (PROTOTYPE ) \u2013 V001/TA01010078 - W750S01/S00 SOI Wafers / 3 \u00B5m"@en . "Prototype (sample) of Bond and Grind Back Silicon-On-Insulator (BGSOI) wafer. BGSOI wafer diameter 150 mm, CZSi substrate sligthly doped by Boron (3-13 ohmcm), thickness 625 or 525 um, BOX (buried oxide layer) 620 nm, defect-free device layer thickness 3 +/- 0.3 um. Crystallographic orientation (100). Bonded interface: BOX/device layer. Back side surface: thermal oxide > 200 nm."@en . "V\u00E1lek, Luk\u00E1\u0161" . "P(TA01010078)" . "4"^^ . . "130004" . . "[46B4B546DF38]" . . "DEMO SAMPLE (PROTOTYPE ) \u2013 V001/TA01010078 - W750S01/S00 SOI Wafers / 3 \u00B5m" . . . "4"^^ . . .